IXTH26P20P IXYS, IXTH26P20P Datasheet - Page 6

• Manufacturer Part Number: IXTH26P20P
• Description: MOSFET P-CH 200V 26A TO-247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTH26P20P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2740pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 26 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -26
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 2740
• Qg, Typ, (nc): 56
• Trr, Typ, (ns): 240
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
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0.10
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Fig. 13. Maximum Transient Thermal Impedance
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Pulse Width - Seconds
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IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
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IXYS REF: T_26P20P(B5)10-10-07
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