MOSFET P-CH 100V 52A TO-247

IXTH52P10P

Manufacturer Part NumberIXTH52P10P
DescriptionMOSFET P-CH 100V 52A TO-247
ManufacturerIXYS
SeriesPolarP™
IXTH52P10P datasheet
 


Specifications of IXTH52P10P

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs50 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C52AVgs(th) (max) @ Id4.5V @ 250µA
Gate Charge (qg) @ Vgs60nC @ 10VInput Capacitance (ciss) @ Vds2845pF @ 25V
Power - Max300WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityP-ChannelResistance Drain-source Rds (on)0.05 Ohms
Drain-source Breakdown Voltage- 100 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current52 APower Dissipation300 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)-100.00
Id(cont), Tc=25°c, (a)-52.00Rds(on), Max, Tj=25°c, (?)0.050
Ciss, Typ, (pf)2845Qg, Typ, (nc)60
Trr, Typ, (ns)120Pd, (w)300
Rthjc, Max, (k/w)0.42Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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PolarP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
G
S
D (TAB)
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AS
C
≤ I
≤ V
dV/dt
I
, V
, T
S
DM
DD
DSS
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.062 in.) from case for 10s
L
T
Plastic body for 10s
SOLD
M
Mounting torque
(TO-3P,TO-220,TO-247)
d
Weight
TO-247
TO-3P
TO-220
TO-263
Symbol
Test Conditions
(T
= 25°C, unless otherwise specified)
J
BV
V
= 0V, I
= - 250μA
DSS
GS
D
V
V
= V
, I
= - 250μA
GS(th)
DS
GS
D
= ± 20V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
R
V
= -10V, I
= 0.5 • I
DS(on)
GS
D
© 2008 IXYS CORPORATION, All rights reserved
IXTA52P10P
IXTH52P10P
IXTP52P10P
IXTQ52P10P
TO-247 (IXTH)
G
D (TAB)
D
S
Maximum Ratings
-100
= 1MΩ
-100
GS
±20
±30
- 52
-130
JM
- 52
1.5
≤ 150°C
10
J
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6.0
5.5
3.0
2.5
Characteristic Values
Min.
Typ.
-100
- 2.5
T
= 125°C
J
, Note 1
D25
V
=
- 100V
DSS
I
=
- 52A
D25
≤ ≤ ≤ ≤ ≤
R
DS(on)
TO-220 (IXTP)
G
D
S
TO-3P (IXTQ)
V
V
V
V
G
D
A
S
A
G = Gate
D
A
S = Source
TAB = Drain
J
V/ns
Features:
W
International standard packages
°C
°C
Fast intrinsic diode
°C
Dynamic dV/dt Rated
Avalanche Rated
°C
Rugged PolarP
TM
°C
Low Q
and R
G
ds(on)
Nm/lb.in.
Low Drain-to-Tab capacitance
Low package inductance
g
g
- easy to drive and to protect
g
g
Applications:
Hight side switching
Push-pull amplifiers
DC Choppers
Current regulators
Max.
Automatic test equipment
V
Advantages:
- 4.5
V
Low gate charge results in simple
±100 nA
drive requirement
-10 μA
Improved Gate, Avalanche and
-150 μA
dynamic dV/dt ruggedness
High power density
50 mΩ
Fast switching
Easy to parallel
50mΩ Ω Ω Ω Ω
D (TAB)
D (TAB)
= Drain
process
characterization
DS99912A(5/08)

IXTH52P10P Summary of contents

  • Page 1

    ... ± 20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P TO-247 (IXTH (TAB Maximum Ratings -100 = 1MΩ -100 GS ±20 ± -130 1.5 ≤ 150° 300 -55 ... +150 150 -55 ... +150 300 260 1 ...

  • Page 2

    ... I = 0.5 • DSS D D25 23 0.21 0.50 Characteristic Values Min. Typ. JM 120 0.53 - 8.9 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P Max 0.42 °C/W °C/W °C/W Max 200 μC A 6,404,065 B1 6,683,344 ...

  • Page 3

    ... TO-263 (IXTA) Outline TO-220 (IXTP) Outline Pins Gate © 2008 IXYS CORPORATION, All rights reserved TO-247 (IXTH) Outline TO-3P (IXTQ) Outline 2 - Drain IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P ∅ Terminals Gate 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2 ...

  • Page 4

    ... 125º 25ºC J -60 -70 -80 -90 -100 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P Fig. 2. Extended Output Characteristics @ 25ºC -90 -70 -50 -30 - -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature 2 -10V GS 2.0 1 52A D 1.6 1.4 1 ...

  • Page 5

    ... IXYS CORPORATION, All rights reserved 40ºC J 25ºC 125ºC -6.0 -6.5 -7.0 -7.5 -8.0 - 25ºC J -3.0 -3.5 -4.0 -4.5 -5.0 - 1,000 C iss - 100 C oss - C rss -25 -30 -35 -40 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P Fig. 8. Transconductance -10 -20 -30 - Amperes D Fig. 10. Gate Charge - 50V 26A -1mA G ...

  • Page 6

    ... IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 13. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P 0.1 1 IXYS REF: T_52P10P(B5)3-25-08-B 10 ...