IXTH52P10P IXYS, IXTH52P10P Datasheet

IXTH52P10P

Manufacturer Part Number

IXTH52P10P

Description

MOSFET P-CH 100V 52A TO-247

Manufacturer

IXYS

Series

PolarP™r

Datasheet

1.IXTP52P10P.pdf (6 pages)

Specifications of IXTH52P10P

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

50 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

52A

Vgs(th) (max) @ Id

4.5V @ 250µA

Gate Charge (qg) @ Vgs

60nC @ 10V

Input Capacitance (ciss) @ Vds

2845pF @ 25V

Power - Max

300W

Mounting Type

Through Hole

Package / Case

TO-247

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.05 Ohms

Drain-source Breakdown Voltage

- 100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

52 A

Power Dissipation

300 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

-100.00

Id(cont), Tc=25°c, (a)

-52.00

Rds(on), Max, Tj=25°c, (?)

0.050

Ciss, Typ, (pf)

2845

Qg, Typ, (nc)

Trr, Typ, (ns)

120

Pd, (w)

300

Rthjc, Max, (k/w)

0.42

Package Style

TO-247

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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PolarP

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

Symbol

dV/dt

Weight

Symbol

D25

GSS

DSS

stg

SOLD

DSS

DGR

GSS

GSM

GS(th)

DS(on)

DSS

= 25°C, unless otherwise specified)

TO-263 (IXTA)

Test Conditions

Continuous

Transient

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

Mounting torque

TO-247

TO-3P

TO-220

TO-263

Test Conditions

= 25°C to 150°C

= 25°C to 150°C, R

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤ I

= 25°C

= 0V, I

= V

= ± 20V, V

= V

= 0V

= -10V, I

, V

DSS

, I

D (TAB)

= - 250μA

≤ V

= - 250μA

= 0.5 • I

DSS

= 0V

, T

(TO-3P,TO-220,TO-247)

D25

≤ 150°C

, Note 1

= 1MΩ

IXTA52P10P

IXTH52P10P

IXTP52P10P

IXTQ52P10P

TO-247 (IXTH)

= 125°C

-55 ... +150

-100

- 2.5

Maximum Ratings

Characteristic Values

Min.

1.13/10

-100

-130

- 52

±20

±30

300

150

300

260

1.5

6.0

5.5

3.0

2.5

Typ.

D (TAB)

±100 nA

- 4.5

-150 μA

Nm/lb.in.

Max.

-10 μA

50 mΩ

V/ns

°C

G = Gate

S = Source

Features:

Applications:

Advantages:

TO-220 (IXTP)

TO-3P (IXTQ)

D25

International standard packages

Fast intrinsic diode

Dynamic dV/dt Rated

Avalanche Rated

Rugged PolarP

Low Q

Low Drain-to-Tab capacitance

Low package inductance

- easy to drive and to protect

Hight side switching

Push-pull amplifiers

DC Choppers

Current regulators

Automatic test equipment

Low gate charge results in simple

drive requirement

Improved Gate, Avalanche and

dynamic dV/dt ruggedness

High power density

Fast switching

Easy to parallel

DS(on)

DSS

and R

≤ ≤ ≤ ≤ ≤

ds(on)

TAB = Drain

- 100V

- 52A

process

characterization

= Drain

D (TAB)

50mΩ Ω Ω Ω Ω

DS99912A(5/08)

D (TAB)

Related parts for IXTH52P10P

IXTH52P10P Summary of contents

Page 1

... ± 20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P TO-247 (IXTH (TAB Maximum Ratings -100 = 1MΩ -100 GS ±20 ± -130 1.5 ≤ 150° 300 -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... I = 0.5 • DSS D D25 23 0.21 0.50 Characteristic Values Min. Typ. JM 120 0.53 - 8.9 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P Max 0.42 °C/W °C/W °C/W Max 200 μC A 6,404,065 B1 6,683,344 ...

Page 3

... TO-263 (IXTA) Outline TO-220 (IXTP) Outline Pins Gate © 2008 IXYS CORPORATION, All rights reserved TO-247 (IXTH) Outline TO-3P (IXTQ) Outline 2 - Drain IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P ∅ Terminals Gate 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2 ...

Page 4

... 125º 25ºC J -60 -70 -80 -90 -100 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P Fig. 2. Extended Output Characteristics @ 25ºC -90 -70 -50 -30 - -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature 2 -10V GS 2.0 1 52A D 1.6 1.4 1 ...

Page 5

... IXYS CORPORATION, All rights reserved 40ºC J 25ºC 125ºC -6.0 -6.5 -7.0 -7.5 -8.0 - 25ºC J -3.0 -3.5 -4.0 -4.5 -5.0 - 1,000 C iss - 100 C oss - C rss -25 -30 -35 -40 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P Fig. 8. Transconductance -10 -20 -30 - Amperes D Fig. 10. Gate Charge - 50V 26A -1mA G ...

Page 6

... IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 13. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P 0.1 1 IXYS REF: T_52P10P(B5)3-25-08-B 10 ...

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