IXTH52P10P IXYS, IXTH52P10P Datasheet - Page 3

• Manufacturer Part Number: IXTH52P10P
• Description: MOSFET P-CH 100V 52A TO-247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTH52P10P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2845pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 52 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -100.00
• Id(cont), Tc=25°c, (a): -52.00
• Rds(on), Max, Tj=25°c, (?): 0.050
• Ciss, Typ, (pf): 2845
• Qg, Typ, (nc): 60
• Trr, Typ, (ns): 120
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
2 - Drain
TO-3P (IXTQ) Outline
TO-247 (IXTH) Outline
Dim.
Terminals: 1 - Gate
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216