STB18NM60N STMicroelectronics, STB18NM60N Datasheet

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STB18NM60N

Manufacturer Part Number
STB18NM60N
Description
MOSFET N-CH 600V 13A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STB18NM60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
285 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 50V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10297-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB18NM60N
Manufacturer:
ST
0
Part Number:
STB18NM60N
Manufacturer:
ST
Quantity:
20 000
Part Number:
STB18NM60ND
Manufacturer:
ST
0
Part Number:
STB18NM60ND
Manufacturer:
ST
Quantity:
20 000
Features
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
October 2010
STW18NM60N
STB18NM60N
STF18NM60N
STP18NM60N
STI18NM60N
Order codes
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
STW18NM60N
STB18NM60N
STF18NM60N
STP18NM60N
STI18NM60N
Order codes
N-channel 600 V, 0.27 Ω , 13 A MDmesh™ II Power MOSFET
Device summary
STB18NM60N, STF18NM60N, STI18NM60N
(@Tjmax)
650 V
V
DSS
< 0.285 Ω 13 A
R
in TO-220, TO-220FP, TO-247, D²PAK and I²PAK
max.
DS(on)
18NM60N
18NM60N
18NM60N
18NM60N
18NM60N
Marking
I
D
Doc ID 15868 Rev 3
110 W
110 W
STP18NM60N, STW18NM60N
30 W
P
W
Figure 1.
TO-247
TO-220FP
TO-220
Package
TO-220
TO-247
D²PAK
I²PAK
Internal schematic diagram
1
1
2
2
3
3
I²PAK
1 2
Tape and reel
Packaging
3
Tube
Tube
Tube
Tube
TO-220FP
D²PAK
www.st.com
1
1
1/18
2
3
3
18

Related parts for STB18NM60N

STB18NM60N Summary of contents

Page 1

... STB18NM60N, STF18NM60N, STI18NM60N N-channel 600 V, 0.27 Ω MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK Features V R DSS DS(on) Order codes (@Tjmax) max. STB18NM60N STF18NM60N < 0.285 Ω STI18NM60N 650 V STP18NM60N STW18NM60N ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB/F/I/P/W18NM60N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) DM ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 5

STB/F/I/P/W18NM60N Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, I²PAK Tj=150°C Tc=25°C Sinlge pulse 0.1 0 Figure 4. Safe operating area for TO-220FP ...

Page 7

STB/F/I/P/W18NM60N Figure 8. Output characteristics I D (A) V =10V Figure 10. Static drain-source on resistance R DS(on) (Ω) 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0. ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 16. Normalized B VDSS BV DSS (norm) 1.07 1.05 1.03 1.01 0.99 0.97 0.95 0.93 -50 ...

Page 9

STB/F/I/P/W18NM60N 3 Test circuits Figure 17. Switching times test circuit for resistive load D.U. Figure 19. Test circuit for inductive load switching and diode recovery times ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STB/F/I/P/W18NM60N Table 8. TO-220FP mechanical data Dim Dia Figure 23. TO-220FP drawing mechanical data A Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 ...

Page 12

Package mechanical data Dim 12/18 D2PAK (TO-263) mechanical data m m ...

Page 13

STB/F/I/P/W18NM60N TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q ...

Page 14

Package mechanical data Dim øP øR S 14/18 TO-247 mechanical data mm. Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 ...

Page 15

STB/F/I/P/W18NM60N Dim I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 2.40 2.70 4.95 ...

Page 16

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 17

STB/F/I/P/W18NM60N 6 Revision history Table 9. Document revision history Date 15-Jun-2009 11-Nov-2009 06-Oct-2010 Revision 1 First release – Added R typical value DS(on) – Added new package, mechanical data: I²PAK 2 – Document status promoted from preliminary data to datasheet ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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