STW11NK100Z STMicroelectronics, STW11NK100Z Datasheet

STW11NK100Z
Manufacturer Part Number	STW11NK100Z
Description	MOSFET N-CH 1KV 8.3A TO-247
Manufacturer	STMicroelectronics
Series	SuperMESH™
STW11NK100Z datasheets	1. STW11NK100Z.pdf (14 pages)

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Specifications of STW11NK100Z
Fet Type	MOSFET N-Channel, Metal Oxide	Fet Feature	Standard
Rds On (max) @ Id, Vgs	1.38 Ohm @ 4.15A, 10V	Drain To Source Voltage (vdss)	1000V (1kV)
Current - Continuous Drain (id) @ 25° C	8.3A	Vgs(th) (max) @ Id	4.5V @ 100µA
Gate Charge (qg) @ Vgs	162nC @ 10V	Input Capacitance (ciss) @ Vds	3500pF @ 25V
Power - Max	230W	Mounting Type	Through Hole
Package / Case	TO-247-3	Configuration	Single
Transistor Polarity	N-Channel	Resistance Drain-source Rds (on)	1.38 Ohm @ 10 V
Drain-source Breakdown Voltage	1000 V	Gate-source Breakdown Voltage	+/- 30 V
Continuous Drain Current	8.3 A	Power Dissipation	230000 mW
Maximum Operating Temperature	+ 150 C	Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Other names	497-3255-5

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Zener - Protected SuperMESH™ PowerMOSFET

General features

DSS

Type

(@Tjmax)

< 1.38 Ω 8.3 A 230W

STW11NK100Z

1000 V

■

Extremely high dv/dt capability

■

100% avalanche tested

■

Gate charge minimized

■

Very low intrinsic capacitances

■

Very good manufacturing repeatibility

Description

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt

capability for the most demanding applications.

Such series complements ST full range of high

voltage MOSFETs including revolutionary

MDmesh™ products.

Applications

■

Switching application

Order codes

Part number

STW11NK100Z

July 2006

N-channel 1000V - 1.1Ω - 8.3A - TO-247

DS(on)

Internal schematic diagram

Marking

W11NK100Z

Rev 2

STW11NK100Z

TO-247

Package

Packaging

TO-247

Tube

1/14

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Download datasheet (316Kb)

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STW11NK100Z Summary of contents
Page 1 ... MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number STW11NK100Z July 2006 N-channel 1000V - 1.1Ω - 8.3A - TO-247 I Pw DS(on) D Internal schematic diagram Marking W11NK100Z Rev 2 STW11NK100Z STW11NK100Z TO-247 Package Packaging TO-247 Tube 1/14 www.st.com 14 ... Page 2 ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) 3 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STW11NK100Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ... Page 3 ... STW11NK100Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1,5KΩ) ESD (G-S) (2) dv/dt Peak diode recovery voltage slope ... Page 4 ... In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 Parameter Test conditions STW11NK100Z Min. Typ. Max. Unit 30 ... Page 5 ... STW11NK100Z 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( Gate threshold voltage GS(th) Static drain-source on R DS(on) resistance Table 6. Dynamic Symbol (1) g Forward transconductance V ... Page 6 ... Pulsed: pulse duration=300µs, duty cycle 1.5% 6/14 Parameter Test conditions I =8.3A =8.3, SD di/dt = 100A/µs, V =80V, Tj=25°C DD (see Figure I =8A, SD di/dt = 100A/µs, V =80V, Tj=150°C DD (see Figure STW11NK100Z Min Typ. Max 8.3 33.2 =0 1.6 GS 560 4.48 16 18) 620 4.57 16 18) Unit µ µ ... Page 7 ... STW11NK100Z 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance Electrical characteristics Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance 7/14 ... Page 8 ... Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics 8/14 Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized B VDSS STW11NK100Z vs temperature ... Page 9 ... STW11NK100Z Figure 13. Maximum avalanche energy vs temperature Electrical characteristics 9/14 ... Page 10 ... Test circuit Package mechanical data Figure 14. Unclamped Inductive load test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times 10/14 Figure 15. Unclamped Inductive waveform Figure 17. Gate charge test circuit STW11NK100Z ... Page 11 ... STW11NK100Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ... Page 12 ... STW11NK100Z inch MIN. TYP. MAX. 0.19 0.20 0.086 0.102 0.039 0.055 0.079 0.094 0.118 0.134 0.015 0.03 0.781 0.793 0.608 0.620 ... Page 13 ... STW11NK100Z 5 Revision history Table 8. Revision history Date 21-Jun-2004 31-Jul-2006 Revision 1 Preliminary version 2 New template, no content change. Revision history Changes 13/14 ... Page 14 ... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STW11NK100Z ...

STW11NK100Z Summary of contents

Page 1
... MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number STW11NK100Z July 2006 N-channel 1000V - 1.1Ω - 8.3A - TO-247 I Pw DS(on) D Internal schematic diagram Marking W11NK100Z Rev 2 STW11NK100Z STW11NK100Z TO-247 Package Packaging TO-247 Tube 1/14 www.st.com 14 ...
Page 2
... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) 3 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STW11NK100Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ...
Page 3
... STW11NK100Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1,5KΩ) ESD (G-S) (2) dv/dt Peak diode recovery voltage slope ...
Page 4
... In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 Parameter Test conditions STW11NK100Z Min. Typ. Max. Unit 30 ...
Page 5
... STW11NK100Z 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( Gate threshold voltage GS(th) Static drain-source on R DS(on) resistance Table 6. Dynamic Symbol (1) g Forward transconductance V ...
Page 6
... Pulsed: pulse duration=300µs, duty cycle 1.5% 6/14 Parameter Test conditions I =8.3A =8.3, SD di/dt = 100A/µs, V =80V, Tj=25°C DD (see Figure I =8A, SD di/dt = 100A/µs, V =80V, Tj=150°C DD (see Figure STW11NK100Z Min Typ. Max 8.3 33.2 =0 1.6 GS 560 4.48 16 18) 620 4.57 16 18) Unit µ µ ...
Page 7
... STW11NK100Z 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance Electrical characteristics Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance 7/14 ...
Page 8
... Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics 8/14 Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized B VDSS STW11NK100Z vs temperature ...
Page 9
... STW11NK100Z Figure 13. Maximum avalanche energy vs temperature Electrical characteristics 9/14 ...
Page 10
... Test circuit Package mechanical data Figure 14. Unclamped Inductive load test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times 10/14 Figure 15. Unclamped Inductive waveform Figure 17. Gate charge test circuit STW11NK100Z ...
Page 11
... STW11NK100Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
Page 12
... STW11NK100Z inch MIN. TYP. MAX. 0.19 0.20 0.086 0.102 0.039 0.055 0.079 0.094 0.118 0.134 0.015 0.03 0.781 0.793 0.608 0.620 ...
Page 13
... STW11NK100Z 5 Revision history Table 8. Revision history Date 21-Jun-2004 31-Jul-2006 Revision 1 Preliminary version 2 New template, no content change. Revision history Changes 13/14 ...
Page 14
... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STW11NK100Z ...

STW11NK100Z

STW11NK100Z

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Specifications of STW11NK100Z

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STW11NK100Z Summary of contents

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