STP23NM60ND STMicroelectronics, STP23NM60ND Datasheet

MOSFET N-CH 600V 19.5A TO-220

STP23NM60ND

Manufacturer Part Number
STP23NM60ND
Description
MOSFET N-CH 600V 19.5A TO-220
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet

Specifications of STP23NM60ND

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
19.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2050pF @ 50V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
19.5 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8445-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP23NM60ND
Manufacturer:
ST
0
Features
Application
Switching applications
Description
The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with a n intrinsic
fast-recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1.
October 2010
STx23NM60ND
The worldwide best R
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
High dv/dt and avalanche capabilities
N-channel 600 V, 0.150 Ω , 19.5 A, FDmesh™ II Power MOSFET
Type
STW23NM60ND
STB23NM60ND
STF23NM60ND
STP23NM60ND
STI23NM60ND
Part number
(with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247
Device summary
(@T
650 V
V
DSS
jmax
DS(on)
)
< 0.180 Ω
R
* area amongst the
max.
DS(on)
23NM60ND
23NM60ND
23NM60ND
23NM60ND
23NM60ND
Marking
19.5 A
Doc ID 14367 Rev 3
I
D
Figure 1.
D²PAK
TO-220
TO-220FP
Package
TO-220
TO-247
D²PAK
I²PAK
1
3
Internal schematic diagram
1
2
3
STx23NM60ND
TO-247
1
2
Tape and reel
3
Packaging
Tube
Tube
Tube
Tube
TO-220FP
I²PAK
www.st.com
1 2
1
2
3
3
1/18
18

Related parts for STP23NM60ND

STP23NM60ND Summary of contents

Page 1

... ZVS phase-shift converters. Table 1. Device summary Part number STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND October 2010 R DS(on max. < 0.180 Ω 19 area amongst the Figure 1 ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB/I/F/P/W23NM60ND 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage (1) dv/dt Drain-source voltage slope Zero gate voltage drain I DSS current (V Gate body leakage current ...

Page 5

STB/I/F/P/W23NM60ND Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 PAK, I PAK Figure 4. Safe operating area for TO-220FP Figure 6. Safe operating area for TO-247 6/18 Figure 3. Thermal impedance for TO-220, ...

Page 7

STB/I/F/P/W23NM60ND Figure 8. Output characteristics Figure 10. Transconductance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations V GS (V) V =480V =10V GS I =19. ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics 8/18 Figure 15. Normalized on resistance vs temperature Figure 17. Normalized B Doc ID 14367 Rev 3 STB/I/F/P/W23NM60ND vs temperature VDSS ...

Page 9

STB/I/F/P/W23NM60ND 3 Test circuits Figure 18. Switching times test circuit for resistive load D.U. Figure 20. Test circuit for inductive load switching and diode recovery times ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: ...

Page 11

STB/I/F/P/W23NM60ND Table 9. TO-220FP mechanical data Dim Dia Figure 24. TO-220FP drawing A Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 ...

Page 12

Package mechanical data Dim L20 L30 ∅P 12/18 TO-220 type A mechanical data Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. ...

Page 13

STB/I/F/P/W23NM60ND Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID ...

Page 14

Package mechanical data Dim 14/18 D²PAK (TO-263) mechanical data Min. 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 4.88 ...

Page 15

STB/I/F/P/W23NM60ND Dim I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 2.40 2.70 4.95 ...

Page 16

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 D1 1.59 1.61 E 1.65 1.85 F 11.4 K0 4.8 P0 3.9 P1 11.9 ...

Page 17

STB/I/F/P/W23NM60ND 6 Revision history Table 10. Document revision history Date 22-Jan-2008 11-Dec-2008 06-Oct-2010 Revision 1 First release 2 Document status promoted from preliminary data to datasheet. 3 Corrected unit in Table 5: On/off states Doc ID 14367 Rev 3 Revision ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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