MOSFET P-CH 100V 50A TO-247AD

IXTH50P10

Manufacturer Part NumberIXTH50P10
DescriptionMOSFET P-CH 100V 50A TO-247AD
ManufacturerIXYS
IXTH50P10 datasheet
 


Specifications of IXTH50P10

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs55 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C50AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs140nC @ 10VInput Capacitance (ciss) @ Vds4350pF @ 25V
Power - Max300WMounting TypeThrough Hole
Package / CaseTO-247ADConfigurationSingle
Transistor PolarityP-ChannelResistance Drain-source Rds (on)0.055 Ohms
Drain-source Breakdown Voltage- 100 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current- 50 APower Dissipation300 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)-100
Id(cont), Tc=25°c, (a)-50Rds(on), Max, Tj=25°c, (?)0.055
Ciss, Typ, (pf)4350Qg, Typ, (nc)140
Trr, Typ, (ns)180Pd, (w)300
Rthjc, Max, (k/w)0.42Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (119Kb)Embed
Next
Standard
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.062 in.) from case for 10s
L
T
Plastic body for 10s
SOLD
M
Mounting torque (TO-247)
d
Weight
TO-247
TO-268
Symbol
Test Conditions
(T
= 25°C, unless otherwise specified)
J
= - 250 μA
BV
V
= 0V, I
DSS
GS
D
V
V
= V
, I
= - 250μA
GS(th)
DS
GS
D
= ±20V, V
I
V
= 0V
GSS
GS
DS
I
V
= 0.8 • V
DSS
DS
DSS
V
= 0V
GS
R
V
= -10V, I
= 0.5 • I
DS(on)
GS
D
© 2008 IXYS CORPORATION, All rights reserved
IXTH50P10
IXTT50P10
Maximum Ratings
-100
= 1MΩ
-100
GS
±20
±30
- 50
- 200
JM
- 50
30
300
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
6
5
Characteristic Values
Min.
Typ.
-100
- 3.0
T
= 125°C
J
, Note 1
D25
V
=
- 100V
DSS
I
=
- 50A
D25
≤ ≤ ≤ ≤ ≤
R
DS(on)
TO-247 (IXTH)
G
D
S
V
V
TO-268 (IXTT)
V
V
A
G
A
S
A
mJ
G = Gate
D = Drain
W
S = Source
TAB = Drain
°C
°C
°C
Features
°C
International standard packages
°C
JEDEC TO-247 AD
Nm/lb.in.
Low R
HDMOS
DS(ON)
Rugged polysilicon gate cell structure
g
g
Unclamped Inductive Switching (UIS)
rated
Low package inductance (< 5nH)
- easy to drive and to protect
Applications
High side switching
Push-pull amplifiers
Max.
DC Choppers
V
Automatic test equipment
- 5.0
V
Advantages
±100 nA
Easy to mount with 1 screw
- 25 μA
(isolated mounting screw hole)
-1 mA
Space savings
55 mΩ
High power density
55mΩ Ω Ω Ω Ω
(TAB)
(TAB)
TM
process
DS98905E(6/08)

IXTH50P10 Summary of contents

  • Page 1

    ... GS(th ±20V GSS 0.8 • V DSS DS DSS -10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved IXTH50P10 IXTT50P10 Maximum Ratings -100 = 1MΩ -100 GS ±20 ± 200 300 - 55 ... +150 150 - 55 ... +150 300 260 1. Characteristic Values Min. Typ. -100 - 3 125° ...

  • Page 2

    ... A Q 5.89 R 4.32 - 200 A - 3.0 V TO-268 (IXTT) Outline ns 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTH50P10 IXTT50P10 ∅ Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 ...

  • Page 3

    ... Normalized to 0.5 I DS(on) vs. Junction Temperature 2 10V GS 1.8 1 50A D 1.4 1.2 1.0 0.8 0.6 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature -55 -50 -45 -40 -35 -30 -25 -20 -15 - -50 - Degrees Centigrade C IXTH50P10 IXTT50P10 -14 -16 -18 -20 Value D25 25A D 75 100 125 150 100 125 150 ...

  • Page 4

    ... Volts Fig. 8. Transconductance -20 -40 - Amperes D Fig. 10. Gate Charge - 50V 25A -1mA nanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 1.00 0.10 0. Pulse Width - milliseconds IXTH50P10 IXTT50P10 = - 40ºC J 25ºC 125ºC -80 -100 100 120 140 100 1000 IXYS REF: T_50P10(7B) 6-23-08-A ...