IXTH50P10 IXYS, IXTH50P10 Datasheet

MOSFET P-CH 100V 50A TO-247AD

IXTH50P10

Manufacturer Part Number
IXTH50P10
Description
MOSFET P-CH 100V 50A TO-247AD
Manufacturer
IXYS
Datasheet

Specifications of IXTH50P10

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
4350pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.055 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 50 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-50
Rds(on), Max, Tj=25°c, (?)
0.055
Ciss, Typ, (pf)
4350
Qg, Typ, (nc)
140
Trr, Typ, (ns)
180
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH50P10
Manufacturer:
ST
Quantity:
30 000
Standard
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
V
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ±20V, V
= 0.8 • V
= 0V
= -10V, I
GS
, I
D
D
= - 250 μA
D
= - 250μA
DSS
DS
= 0.5 • I
= 0V
D25
GS
, Note 1
= 1MΩ
T
J
JM
= 125°C
IXTH50P10
IXTT50P10
- 55 ... +150
- 55 ... +150
-100
- 3.0
Maximum Ratings
Characteristic Values
1.13 / 10
Min.
- 200
-100
-100
- 50
- 50
±20
±30
300
150
300
260
30
6
5
Typ.
±100 nA
- 5.0
Nm/lb.in.
- 25 μA
Max.
55 mΩ
-1 mA
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
V
I
R
TO-247 (IXTH)
G = Gate
S = Source
Features
Applications
Advantages
TO-268 (IXTT)
D25
International standard packages
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (< 5nH)
- easy to drive and to protect
High side switching
Push-pull amplifiers
DC Choppers
Automatic test equipment
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
DS(on)
DSS
G
D
DS(ON)
S
G
≤ ≤ ≤ ≤ ≤
=
=
HDMOS
S
D = Drain
TAB = Drain
- 100V
- 50A
55mΩ Ω Ω Ω Ω
TM
process
DS98905E(6/08)
(TAB)
(TAB)

Related parts for IXTH50P10

IXTH50P10 Summary of contents

Page 1

... GS(th ±20V GSS 0.8 • V DSS DS DSS -10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved IXTH50P10 IXTT50P10 Maximum Ratings -100 = 1MΩ -100 GS ±20 ± 200 300 - 55 ... +150 150 - 55 ... +150 300 260 1. Characteristic Values Min. Typ. -100 - 3 125° ...

Page 2

... A Q 5.89 R 4.32 - 200 A - 3.0 V TO-268 (IXTT) Outline ns 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTH50P10 IXTT50P10 ∅ Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 ...

Page 3

... Normalized to 0.5 I DS(on) vs. Junction Temperature 2 10V GS 1.8 1 50A D 1.4 1.2 1.0 0.8 0.6 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature -55 -50 -45 -40 -35 -30 -25 -20 -15 - -50 - Degrees Centigrade C IXTH50P10 IXTT50P10 -14 -16 -18 -20 Value D25 25A D 75 100 125 150 100 125 150 ...

Page 4

... Volts Fig. 8. Transconductance -20 -40 - Amperes D Fig. 10. Gate Charge - 50V 25A -1mA nanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 1.00 0.10 0. Pulse Width - milliseconds IXTH50P10 IXTT50P10 = - 40ºC J 25ºC 125ºC -80 -100 100 120 140 100 1000 IXYS REF: T_50P10(7B) 6-23-08-A ...

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