IXTH50P10 IXYS, IXTH50P10 Datasheet - Page 2

• Manufacturer Part Number: IXTH50P10
• Description: MOSFET P-CH 100V 50A TO-247AD
• Manufacturer: IXYS

Specifications of IXTH50P10

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 4350pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 50 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -50
• Rds(on), Max, Tj=25°c, (?): 0.055
• Ciss, Typ, (pf): 4350
• Qg, Typ, (nc): 140
• Trr, Typ, (ns): 180
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, pulse width limited by T
I
I
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
G
= - 25A, V
= - 25A, di/dt = -100A/μs, V
= -10V, I
= 0V, V
= -10V, V
= 4.7Ω (External)
= -10V, V
= 0V
DS
GS
D
DS
DS
= - 25V, f = 1MHz
= 0.5 • I
= 0V, Note 1
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
D25
, Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
R
= 0.5 • I
= 0.5 • I
= - 50V, V
5,049,961
5,063,307
5,187,117
JM
D25
D25
GS
5,237,481
5,381,025
5,486,715
= 0V
Min.
13
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
4350
1505
Typ.
0.25
733
140
180
Typ.
22
46
39
86
38
25
85
Max.
0.42 °C/W
- 200
- 3.0
6,404,065 B1
6,534,343
6,583,505
Max.
- 50
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXTT) Outline
TO-247 (IXTH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
4.7
2.2
2.2
1.0
Millimeter
1
.4
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
IXTH50P10
IXTT50P10
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
2 - Drain
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216