MOSFET N-CH 250V 110A TO-247

IXTH110N25T

Manufacturer Part NumberIXTH110N25T
DescriptionMOSFET N-CH 250V 110A TO-247
ManufacturerIXYS
IXTH110N25T datasheet
 

Specifications of IXTH110N25T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs24 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C110AVgs(th) (max) @ Id4.5V @ 1mA
Gate Charge (qg) @ Vgs157nC @ 10VInput Capacitance (ciss) @ Vds9400pF @ 25V
Power - Max694WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.024 Ohms
Drain-source Breakdown Voltage250 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current110 APower Dissipation694 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)250
Id(cont), Tc=25°c, (a)110Rds(on), Max, Tj=25°c, (?)0.024
Ciss, Typ, (pf)9400Qg, Typ, (nc)157
Trr, Typ, (ns)170Trr, Max, (ns)-
Pd, (w)694Rthjc, Max, (k/w)0.18
Package StyleTO-247Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
Lead Current Limit, RMS
LRMS
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
≤ I
≤ V
dV/dt
I
, V
, T
S
DM
DD
DSS
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.062 in.) from case for 10s
L
T
Plastic body for 10 seconds
SOLD
M
Mounting torque (TO-247)
d
F
Mounting force (PLUS220)
C
Weight
TO-247
PLUS220
Symbol
Test Conditions
(T
= 25°C unless otherwise specified)
J
BV
V
= 0V, I
= 250μA
DSS
GS
D
V
V
= V
, I
= 1mA
GS(th)
DS
GS
D
I
V
= ± 20V, V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
= 0.5 • I
R
V
= 10V, I
DS(on)
GS
D
D25
© 2008 IXYS CORPORATION, All rights reserved
IXTH110N25T
IXTV110N25TS
Maximum Ratings
250
= 1MΩ
250
GS
± 20
± 30
110
75
300
JM
25
1
≤ 150°C
10
J
694
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
11..65 / 2.5..14.6
6
4
Characteristic Values
Min.
Typ.
250
2.5
T
= 125°C
J
, Notes 1, 2
V
= 250V
DSS
I
= 110A
D25
24mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤
R
DS(on)
TO-247 (IXTH)
V
V
V
V
G
D
A
S
A
A
PLUS220SMD (IXTV_S)
A
J
V/ns
W
G
°C
S
°C
°C
°C
G = Gate
D
S = Source
TAB = Drain
°C
Nm/lb.in.
N/lb.
Features
g
g
International standard packages
Avalanche rated
Advantages
Max.
Easy to mount
V
Space savings
4.5
V
High power density
± 200 nA
Applications
5 μA
250 μA
DC-DC converters
24 mΩ
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
Uninterruptible power supplies
D (TAB)
D (TAB)
= Drain
DS99904A(08/08)

IXTH110N25T Summary of contents

  • Page 1

    ... ± 20V GSS DSS DS DSS 0.5 • 10V, I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXTH110N25T IXTV110N25TS Maximum Ratings 250 = 1MΩ 250 GS ± 20 ± 30 110 75 300 ≤ 150° 694 -55 ... +150 150 -55 ... +150 300 260 1. 11..65 / 2.5..14 Characteristic Values Min ...

  • Page 2

    ... DSS D 50 0.18 °C/W 0.25 Characteristic Values Min. Typ. JM 170 2.3 27 Kelvin test contact location must be DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH110N25T IXTV110N25TS TO-247AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter Min 4 2 ...

  • Page 3

    ... Junction Temperature 3.0 2 10V GS 2.6 2.4 2.2 2 110A D 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 90 External Lead Current Limit -50 - Degrees Centigrade C IXTH110N25T IXTV110N25TS 55A Value 55A D 75 100 125 150 75 100 125 150 ...

  • Page 4

    ... I - Amperes D Fig. 10. Gate Charge 125V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 1.00 0.10 0.01 0.00 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXTH110N25T IXTV110N25TS 40ºC J 25ºC 125ºC 100 120 140 160 100 120 140 160 0 ...

  • Page 5

    ... T = 25º 125º 100 110 120 IXTH110N25T IXTV110N25TS Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Ω 15V 125V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature - - - - d(off Ω 15V 125V 55A 110A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance ...