IXTH110N25T IXYS, IXTH110N25T Datasheet - Page 2

MOSFET N-CH 250V 110A TO-247

IXTH110N25T

Manufacturer Part Number
IXTH110N25T
Description
MOSFET N-CH 250V 110A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXTH110N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
157nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
694W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
694 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.024
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
157
Trr, Typ, (ns)
170
Trr, Max, (ns)
-
Pd, (w)
694
Rthjc, Max, (k/w)
0.18
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
Q
I
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
5 mm or less from the package body.
Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%.
Resistive Switching Times
V
R
I
V
V
V
V
(TO-247)
V
Repetitive, pulse width limited by T
I
Test Conditions
Test Conditions
F
F
GS
R
G
DS
GS
GS
GS
= 55A, -di/dt = 250A/μs
= 55A, V
= 100V, V
= 2Ω (External)
= 10V, V
= 15V, V
= 10V, I
= 0V, V
= 0V
GS
DS
D
GS
DS
DS
= 0V, Note 1
= 0.5 • I
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
DSS
, Note 1
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 25A
= 0.5 • I
Kelvin test contact location must be
5,049,961
5,063,307
5,187,117
JM
D25
Min.
5,237,481
5,381,025
5,486,715
65
Min.
Characteristic Values
Characteristic Values
9400
0.25
Typ.
110
850
157
6,162,665
6,259,123 B1
6,306,728 B1
55
19
27
60
27
40
50
Typ.
170
2.3
27
0.18 °C/W
Max.
Max.
110 A
350 A
1.2 V
6,404,065 B1
6,534,343
6,583,505
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS220SMD (IXTV_S) Outline
TO-247AD Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
ÆP
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
3 - Source
.4
IXTH110N25T
IXTV110N25TS
1
7,005,734 B2
7,063,975 B2
21.46
16.26
20.32
2
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
3
.8
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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