IXTH110N25T IXYS, IXTH110N25T Datasheet - Page 5

MOSFET N-CH 250V 110A TO-247

IXTH110N25T

Manufacturer Part Number
IXTH110N25T
Description
MOSFET N-CH 250V 110A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXTH110N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
157nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
694W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
694 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.024
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
157
Trr, Typ, (ns)
170
Trr, Max, (ns)
-
Pd, (w)
694
Rthjc, Max, (k/w)
0.18
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2008 IXYS CORPORATION, All rights reserved
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45
40
35
30
25
20
30
29
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26
25
24
23
22
21
29
28
27
26
25
24
23
22
21
20
25
2
T
T
t
T
V
J
J
r
J
DS
Switching Times vs. Gate Resistance
= 25ºC
= 125ºC
30
35
= 125ºC, V
Switching Times vs. Drain Current
3
= 125V
Rise Time vs. Junction Temperature
I
D
t
R
V
40
Fig. 17. Resistive Turn-off
f
45
DS
= 55A
G
Fig. 15. Resistive Turn-on
= 2 Ω , V
4
= 125V
Fig. 13. Resistive Turn-on
t
d(on)
GS
50
55
= 15V
T
J
- - - -
I
D
5
R
I
- Degrees Centigrade
GS
60
G
t
- Amperes
D
d(off
65
= 15V
= 110A
- Ohms
I
D
)
= 110A, 55A
- - - -
70
6
75
80
7
85
90
T
8
95
T
J
J
= 125ºC
100
= 25ºC
R
V
V
G
GS
DS
105
= 2 Ω
9
= 15V
= 125V
110
115
10
120
31
30
29
28
27
26
25
24
23
22
21
20
19
90
85
80
75
70
65
60
55
50
45
125
100
38
36
34
32
30
28
26
24
22
20
18
16
14
90
80
70
60
50
40
30
20
10
29
28
27
26
25
24
23
22
21
20
25
20
2
Switching Times vs. Junction Temperature
t
R
V
Switching Times vs. Gate Resistance
f
t
T
V
G
DS
R
V
V
35
f
J
DS
30
GS
DS
G
= 2 Ω , V
= 125ºC, V
= 125V
3
= 2 Ω
= 125V
= 15V
= 125V
45
Fig. 18. Resistive Turn-off
40
Fig. 16. Resistive Turn-off
Rise Time vs. Drain Current
GS
4
t
Fig. 14. Resistive Turn-on
T
d(off)
t
J
d(off)
55
= 15V
GS
- Degrees Centigrade
50
- - - -
= 15V
- - - -
5
R
65
G
60
- Ohms
I
D
- Amperes
75
6
70
I
D
I
= 55A, 110A
85
I
D
D
7
= 110A
80
= 55A
IXTH110N25T
IXTV110N25TS
T
T
95
IXYS REF: T_110N25T(8W)08-11-08-A
J
J
= 25ºC
= 125ºC
8
90
105
100
9
115
110
10
125
220
200
180
160
140
120
100
80
60
40
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120

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