MOSFET N-CH 500V 21A TO-247AD

IXFH21N50

Manufacturer Part NumberIXFH21N50
DescriptionMOSFET N-CH 500V 21A TO-247AD
ManufacturerIXYS
SeriesHiPerFET™
IXFH21N50 datasheet
 

Specifications of IXFH21N50

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs250 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C21AVgs(th) (max) @ Id4V @ 4mA
Gate Charge (qg) @ Vgs160nC @ 10VInput Capacitance (ciss) @ Vds4200pF @ 25V
Power - Max300WMounting TypeThrough Hole
Package / CaseTO-247ADConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.25 Ohms
Forward Transconductance Gfs (max / Min)21 sDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current21 A
Power Dissipation300 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Vdss, Max, (v)500Id(cont), Tc=25°c, (a)21
Rds(on), Max, Tj=25°c, (?)0.25Ciss, Typ, (pf)4200
Qg, Typ, (nc)135Trr, Typ, (ns)-
Trr, Max, (ns)250Pd, (w)298
Rthjc, Max, (ºc/w)0.42Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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TM
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
TM
High dv/dt, Low t
, HDMOS
rr
Symbol
Test Conditions
V
T
= 25 C to 150 C
DSS
J
V
T
= 25 C to 150 C; R
DGR
J
V
Continuous
GS
V
Transient
GSM
I
T
= 25 C
D25
C
I
T
= 25 C, pulse width limited by T
DM
C
I
T
= 25 C
AR
C
E
T
= 25 C
AR
C
dv/dt
I
I
, di/dt 100 A/ s, V
S
DM
T
150 C, R
= 2
J
G
P
T
= 25 C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
M
Mounting torque
d
Weight
Symbol
Test Conditions
V
V
= 0 V, I
= 250 A
DSS
GS
D
V
V
= V
, I
= 4 mA
GS(th)
DS
GS
D
I
V
= 20 V
, V
= 0
GSS
GS
DC
DS
I
V
= 0.8 • V
DSS
DS
DSS
V
= 0 V
GS
© 1999 IXYS All rights reserved
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
Family
Maximum Ratings
500
= 1 M
500
GS
20
30
21N50
21
24N50
24
26N50
26
21N50
84
JM
24N50
96
26N50
104
21N50
21
24N50
24
26N50
26
30
V
,
5
DD
DSS
300
-55 ... +150
150
-55 ... +150
300
1.13/10
TO-204 = 18 g, TO-247 = 6 g
Characteristic Values
(T
= 25 C, unless otherwise specified)
J
min.
typ.
max.
500
2
100
T
= 25 C
200
J
T
= 125 C
J
V
I
DSS
D25
500 V 21 A 0.25
500 V 24 A 0.23
500 V 26 A 0.20
t
250 ns
rr
TO-247 AD (IXFH)
V
V
V
V
TO-268 (D3) Case Style
A
A
A
G
A
A
S
A
A
TO-204 AE (IXFM)
A
A
mJ
V/ns
D
G = Gate,
D = Drain,
S = Source,
TAB = Drain
W
C
Features
• International standard packages
C
• Low R
HDMOS
TM
DS (on)
C
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
C
rated
• Low package inductance
Nm/lb.in.
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
V
• Temperature and lighting controls
• Low voltage relays
4
V
Advantages
nA
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
A
• High power surface mountable package
1 mA
• High power density
R
DS(on)
(TAB)
(TAB)
G
process
91525H (9/99)

IXFH21N50 Summary of contents

  • Page 1

    ... Weight Symbol Test Conditions 250 A DSS GS(th GSS 0.8 • V DSS DS DSS © 1999 IXYS All rights reserved IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 Family Maximum Ratings 500 = 1 M 500 21N50 21 24N50 24 26N50 26 21N50 84 JM 24N50 96 26N50 104 21N50 21 24N50 24 26N50 DSS 300 -55 ... +150 150 -55 ...

  • Page 2

    ... Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S) TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFH21N50 IXFM21N50 Characteristic Values Min. Typ. 21N50 ...

  • Page 3

    ... GS 1 15V GS 1.1 1.0 0 Amperes D Fig. 5 Drain Current vs. Case Temperature 30 26N50 25 24N50 20 21N50 -50 - Degrees C C © 1999 IXYS All rights reserved IXFH21N50 IXFM21N50 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 ...

  • Page 4

    ... D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFH21N50 IXFM21N50 Fig.8 Forward Bias Safe Operating Area 100 Limited 0.1 1 Fig ...