IXFH21N50 IXYS, IXFH21N50 Datasheet - Page 2

• Manufacturer Part Number: IXFH21N50
• Description: MOSFET N-CH 500V 21A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH21N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Forward Transconductance Gfs (max / Min): 21 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 21
• Rds(on), Max, Tj=25°c, (?): 0.25
• Ciss, Typ, (pf): 4200
• Qg, Typ, (nc): 135
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
R
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
DS(on)
iss
oss
rss
thJC
thCK
SD
RM
g(on)
gs
gd
TO-268 Outline
J
= 25 C, unless otherwise specified)
Test Conditions
V
Pulse test, t
V
V
V
R
V
(TO-247 Case Style)
Test Conditions
V
Repetitive;
pulse width limited by T
I
Pulse test, t 300 s, duty cycle d 2 %
I
-di/dt = 100 A/ s,
V
F
F
GS
DS
GS
GS
GS
GS
G
R
= I
= I
= 100 V
= 10 V, I
= 10 V; I
= 0 V, V
= 10 V, V
= 2
= 10 V, V
= 0 V
S
S
, V
GS
= 0 V,
(External)
DS
D
D
DS
DS
= 0.5 I
= 0.5 I
= 25 V, f = 1 MHz
300 s, duty cycle d
= 0.5 V
= 0.5 V
D25
D25
DSS
DSS
, pulse test
JM
, I
, I
D
D
= 0.5 I
= 0.5 I
21N50
24N50
26N50
(T
21N50
24N50
26N50
21N50
24N50
26N50
T
T
T
T
T
T
J
J
J
J
J
J
J
= 25 C
= 125 C
= 25 C
= 125 C
= 25 C
= 125 C
= 25 C, unless otherwise specified)
D25
D25
2 %
Min. Typ.
Min.
11
IXFH21N50
IXFM21N50
Characteristic Values
Characteristic Values
4200
0.25
450
135
135
Typ.
21
16
33
65
30
28
62
10
15
4,835,592
4,850,072
1
2
0.25
0.23
0.20
0.42 K/W
Max.
160
104
250
400
1.5
25
45
80
40
40
85
21
24
26
84
96
Max.
4,881,106
4,931,844
K/W
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
n s
S
A
A
A
A
A
A
V
A
A
C
C
IXFH24N50
IXFM24N50
IXFT24N50
5,017,508
5,034,796
TO-204 AE (IXFM) Outline
Min. Recommended Footprint
TO-247 AD (IXFH) Outline
Pins: 1 - Gate, 2 - Source, Case - Drain
Dim.
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
S
A
A1
e
e1
L
q
R
R1
s
1
2
1
2
P
b
p
D
p1
1
2
5,049,961
5,063,307
20.80
15.75
19.81
3
10.67
11.18
12.58
16.64
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Min.
1.53
1.45
5.21
3.84
3.84
3.33
Millimeter
4.7
2.2
2.2
1.0
30.15 BSC
6.4
Millimeter
.4
BSC
21.46
16.26
20.32
Max.
22.22
11.17
12.19
13.33
17.14
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
11.4
3.42
1.60
5.71
4.19
4.19
4.77
5.3
2.6
1.4
.8
5,187,117
5,237,481
IXFH26N50
IXFM26N50
IXFT26N50
0.205
0.232
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242
.250
.060
.057
.420
.205
.440
.151
.151
.495
.131
.655
1.187 BSC
Inches
Inches
BSC
0.225
0.252
Max.
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
5,486,715
5,381,025
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
Max.
.450
.135
.063
.875
.440
.225
.480
.165
.165
.525
.188
.675