STP30NM60ND STMicroelectronics, STP30NM60ND Datasheet

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... Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode. Table 1. Device summary Order codes STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND November 2008 R DS(on max PAK 25 A 0.13 Ω ...

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Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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STx30NM60ND 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) DM ...

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Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source V (BR)DSS breakdown voltage (1) dv/dt Drain source voltage slope Zero gate voltage I DSS drain current (V Gate-body leakage I ...

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STx30NM60ND Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse ...

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Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 6. Safe operating area for TO-247 6/18 Figure 3. Thermal impedance for TO-220 / D²PAK ...

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STx30NM60ND Figure 8. Output characteristics I ( Figure 10. Transconductance Gfs(S) 30.5 T =-50°C J 25.5 150°C 20.5 15.5 10.5 5.5 0 ...

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Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.1 I =250µA D 1.05 1 0.95 0.9 0.85 0.8 0.75 0.7 -50 - Figure 16. Source-drain diode forward characteristics V ( ...

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STx30NM60ND 3 Test circuits Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive waveform Figure 19. Gate charge test circuit Figure 21. Unclamped Inductive ...

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Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

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STx30NM60ND Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 ...

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Package mechanical data DIM Ø 12/18 TO-220FP mechanical data mm. Min. Typ. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 0.75 1 1.15 ...

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STx30NM60ND DIM TO-262 (I PAK) mechanical data mm. Min. Typ. Max. 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 2.40 ...

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Package mechanical data Dim 14/18 D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 ...

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STx30NM60ND Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Package mechanical ...

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Packing mechanical data 5 Packing mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

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STx30NM60ND 6 Revision history Table 8. Document revision history Date 29-Nov-2007 11-Nov-2008 Revision 1 initial release 2 Document status promoted from preliminary data to datasheet. Revision history Changes 17/18 ...

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... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...