MOSFET N-CH 1KV 6A TO-247AD

IXFH6N100

Manufacturer Part NumberIXFH6N100
DescriptionMOSFET N-CH 1KV 6A TO-247AD
ManufacturerIXYS
SeriesHiPerFET™
IXFH6N100 datasheet
 

Specifications of IXFH6N100

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs2 Ohm @ 500mA, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C6AVgs(th) (max) @ Id4.5V @ 2.5mA
Gate Charge (qg) @ Vgs130nC @ 10VInput Capacitance (ciss) @ Vds2600pF @ 25V
Power - Max180WMounting TypeThrough Hole
Package / CaseTO-247ADConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)2 Ohms
Forward Transconductance Gfs (max / Min)6 sDrain-source Breakdown Voltage1000 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current6 A
Power Dissipation180 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleFall Time60 ns
Minimum Operating Temperature- 55 CRise Time40 ns
Vdss, Max, (v)1000Id(cont), Tc=25°c, (a)6
Rds(on), Max, Tj=25°c, (?)2Ciss, Typ, (pf)2600
Qg, Typ, (nc)88Trr, Typ, (ns)-
Trr, Max, (ns)250Pd, (w)179
Rthjc, Max, (ºc/w)0.70Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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TM
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
, HDMOS
rr
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C; R
DGR
J
V
Continuous
GS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AR
C
£ I
, di/dt £ 100 A/ms, V
dv/dt
I
S
DM
£ 150°C, R
= 2 W
T
J
G
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
M
Mounting torque
d
Weight
Symbol
Test Conditions
V
V
= 0 V, I
= 3 mA
DSS
GS
D
V
V
= V
, I
= 2.5 mA
GS(th)
DS
GS
D
= ±20 V
I
V
, V
= 0
GSS
GS
DC
DS
I
V
= 0.8 • V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 • I
DS(on)
GS
D
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
IXFH/IXFM 6 N90
IXFH/IXFM 6 N100
TM
Family
Maximum Ratings
6N90
900
= 1 MW
6N100
1000
GS
±20
±30
6
24
JM
6
18
£ V
,
5
DD
DSS
180
-55 ... +150
150
-55 ... +150
300
1.13/10
TO-204 = 18 g, TO-247 = 6 g
Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min.
typ.
max.
6N90
900
6N100
1000
2.0
T
= 25°C
J
T
= 125°C
J
6N90
D25
6N100
V
I
DSS
D25
900 V
6 A
1000 V
6 A
£ 250 ns
t
rr
TO-247 AD (IXFH)
V
V
V
V
A
TO-204 AA (IXFM)
A
A
mJ
V/ns
D
W
G = Gate,
D = Drain,
°C
S = Source,
TAB = Drain
°C
°C
Features
°C
• International standard packages
• Low R
HDMOS
DS (on)
Nm/lb.in.
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
V
• Switched-mode and resonant-mode
V
power supplies
4.5
V
• DC choppers
• AC motor control
±100
nA
• Temperature and lighting controls
• Low voltage relays
mA
250
1
mA
Advantages
• Easy to mount with 1 screw (TO-247)
W
1.8
(isolated mounting screw hole)
W
2.0
• Space savings
• High power density
R
DS(on)
1.8 W
2.0 W
(TAB)
G
TM
process
91529E(10/95)
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IXFH6N100 Summary of contents

  • Page 1

    ... DSS DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 TM Family Maximum Ratings 6N90 900 = 1 MW 6N100 1000 GS ±20 ± ...

  • Page 2

    ... 25°C 0 125°C 1 25°C 7 125°C 9.0 J IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 6N90 IXFH 6N100 IXFM 6N90 IXFM 6N100 TO-247 AD (IXFH) Outline 100 ns 110 ns ...

  • Page 3

    ... V = 10V GS 2 2.0 1 Amperes D Fig. 5 Drain Current vs. Case Temperature -50 - Degrees C C © 2000 IXYS All rights reserved = 10V 15V 8 10 6N90 6N100 75 100 125 150 IXFH 6N90 IXFH 6N100 IXFM 6N90 IXFM 6N100 Fig. 2 Input Admittance 25° 125° 55°C J ...

  • Page 4

    ... Fig.11 Transient Thermal Impedance 1.000 D=0.5 D=0.2 0.100 D=0.1 D=0.05 D=0.02 D=0.01 0.010 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 0.001 0.01 Time - Seconds IXFH 6N90 IXFH 6N100 IXFM 6N90 IXFM 6N100 Fig.8 Forward Bias Safe Operating Area ...