IXFH6N100 IXYS, IXFH6N100 Datasheet - Page 2

MOSFET N-CH 1KV 6A TO-247AD

IXFH6N100

Manufacturer Part Number
IXFH6N100
Description
MOSFET N-CH 1KV 6A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH6N100

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4.5V @ 2.5mA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohms
Forward Transconductance Gfs (max / Min)
6 s
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
60 ns
Minimum Operating Temperature
- 55 C
Rise Time
40 ns
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
6
Rds(on), Max, Tj=25°c, (?)
2
Ciss, Typ, (pf)
2600
Qg, Typ, (nc)
88
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
179
Rthjc, Max, (ºc/w)
0.70
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH6N100
Manufacturer:
IXYS
Quantity:
30 000
Part Number:
IXFH6N100
Manufacturer:
IXYS
Quantity:
35 500
Part Number:
IXFH6N100
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXFH6N100F
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
S
SM
RM
d(on)
d(off)
f
r
rr
fs
SD
oss
thJC
thCK
iss
rss
g(on)
gs
gd
RM
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
F
DS
GS
= I
I
-di/dt = 100 A/ms,
V
F
= 0 V
S
= 10 V; I
V
V
R
V
R
, V
= I
GS
GS
GS
G
= 100 V
= 4.7 W (External)
GS
S
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, pulse test
T
T
T
T
T
T
J
J
J
J
J
J
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
DSS
DSS
(T
(T
=
= 125°C
=
= 125°C
=
= 125°C
, I
, I
J
J
JM
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
25°C
25°C
25°C
= 0.5 • I
= 0.5 • I
4,881,106
4,931,844
D25
D25
min.
min.
Characteristic Values
Characteristic Values
4
5,017,508
5,034,796
2600
typ.
typ.
0.25
180
100
0.5
1.0
7.5
9.0
45
35
40
60
88
21
38
6
max.
max.
100
110
200
100
130
0.7
30
70
250 ns
400 ns
5,049,961
5,063,307
1.5
24
6
K/W
K/W
nC
nC
nC
mC
mC
pF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
A
IXFH 6N90
IXFM 6N90
5,187,117
5,237,481
TO-247 AD (IXFH) Outline
TO-204 AA (IXFM) Outline
Dim. Millimeter
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
5,486,715
5,381,025
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
38.61 39.12
19.43 19.94
30.15
10.67 11.17
16.64 17.14
11.18 12.19
25.16 25.90
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
6.40
0.97
1.53
5.21
3.84
Min.
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
Millimeter
-
Max.
BSC
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
9.14
1.09
2.92
5.71
4.19
IXFH 6N100
IXFM 6N100
Min.
1.520 1.540
1.187
0.420 0.440
0.655 0.675
0.440 0.480
0.991 1.020
0.252 0.360
0.038 0.043
0.060 0.115
0.205 0.225
0.151 0.165
Inches
Min.
Inches
- 0.785
0.177
Max.
Max.
BSC
2 - 4

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