IXFH6N100 IXYS, IXFH6N100 Datasheet - Page 3

MOSFET N-CH 1KV 6A TO-247AD

IXFH6N100

Manufacturer Part Number
IXFH6N100
Description
MOSFET N-CH 1KV 6A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH6N100

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4.5V @ 2.5mA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohms
Forward Transconductance Gfs (max / Min)
6 s
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
60 ns
Minimum Operating Temperature
- 55 C
Rise Time
40 ns
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
6
Rds(on), Max, Tj=25°c, (?)
2
Ciss, Typ, (pf)
2600
Qg, Typ, (nc)
88
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
179
Rthjc, Max, (ºc/w)
0.70
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH6N100
Manufacturer:
IXYS
Quantity:
30 000
Part Number:
IXFH6N100
Manufacturer:
IXYS
Quantity:
35 500
Part Number:
IXFH6N100
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXFH6N100F
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
3.0
2.8
2.6
2.4
2.2
2.0
1.8
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
T
Fig. 5 Drain Current vs.
J
=25°C
T
-25
J
=25°C
5
2
Case Temperature
DS(on)
0
10
T
25
4
I
vs. Drain Current
C
V
D
V
GS
- Degrees C
- Amperes
DS
= 10V
50
15
- Volts
V
6
GS
V
GS
= 10V
75
= 15V
6N100
6N90
20
100 125 150
8
25
6V
5V
10
30
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
9
8
7
6
5
4
3
2
1
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
-50
-50
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
IXFH 6N90
IXFM 6N90
-25
-25
V
T
of Drain to Source Resistance
Breakdown and Threshold Voltage
GS(th)
J
= 125°C
0
0
T
J
= 25°C
T
T
25
25
J
J
V
- Degrees C
- Degrees C
GS
50
50
- Volts
I
D
= 3.0A
T
J
75
75
= - 55°C
IXFH 6N100
IXFM 6N100
100 125 150
100 125 150
BV
DSS
3 - 4

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