IXFH36N60P IXYS, IXFH36N60P Datasheet
IXFH36N60P
Manufacturer Part Number
IXFH36N60P
Description
MOSFET N-CH 600V 36A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFH36N60P.pdf
(4 pages)
Specifications of IXFH36N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
102nC @ 10V
Input Capacitance (ciss) @ Vds
5800pF @ 25V
Power - Max
650W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
39 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
650000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.19
Ciss, Typ, (pf)
5800
Qg, Typ, (nc)
102
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
650
Rthjc, Max, (ºc/w)
0.19
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH36N60P
Manufacturer:
FSC
Quantity:
5 000
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
M
Weight
T
T
GSS
DSS
D25
DM
AR
GS(th)
© 2006 IXYS All rights reserved
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
Mounting torque (TO-247 & TO-264)
TO-247
TO-268
TO-264
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 250 µA
= 4 mA
, V
= 0.5 I
G
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXFH 36N60P
IXFK 36N60P
IXFT 36N60P
,
600
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±30
±40
650
150
300
260
1.5
36
80
36
50
20
10
6
5
±200
1000
100
190
Max.
5.0
V/ns
m Ω
° C
° C
mJ
nA
µA
µA
°C
°C
°C
W
g
g
g
V
V
V
V
V
V
A
A
A
J
V
I
R
t
TO-268 (IXFT) Case Style
G = Gate
S = Source
TO-247 (IXFH)
TO-264 AA (IXFK)
Features
l
l
l
l
Advantages
l
l
l
D25
rr
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
DS(on)
DSS
Easy to mount
Space savings
High power density
G
D
G
G
S
≤ ≤ ≤ ≤ ≤
D
≤ ≤ ≤ ≤ ≤ 190 mΩ Ω Ω Ω Ω
=
= 600
S
D
Tab = Drain
S
200 ns
36
= Drain
D (TAB)
DS99383E(02/06)
D (TAB)
(TAB)
A
V
Related parts for IXFH36N60P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TRANS MOSFET N-CH 900V 12A 3TO-247AD
Manufacturer:
IXYS Corporation
Part Number:
Description:
TRANS MOSFET N-CH 600V 23A 3TO-247 AD
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
TRANS MOSFET N-CH 500V 24A 3TO-247 AD
Manufacturer:
IXYS Corporation
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXFH36N60P Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 36N60P IXFK 36N60P IXFT 36N60P Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.5 ≤ DSS 650 -55 ... +150 150 -55 ... +150 1 ...
Page 2
... A/µ 100V TO-268 (IXFT)Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. Max. ...
Page 3
... D S Fig. 3. Output Characteristics º @ 125 10V Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3 10V GS 3.0 2.6 2.2 1.8 1.4 1.0 0 Amperes D © 2006 IXYS All rights reserved 3.1 2.8 7V 2.5 6V 2.2 1.9 1.6 1 0.7 0 125º 25ºC J ...
Page 4
... Source-To-Drain Voltage 100 125º 0.4 0.5 0.6 0.7 0 Volts S D Fig. 11. Capacitance 10000 1000 100 f = 1MHz Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 5 25º 0.9 1 1.1 1.2 1.00 C iss 0.10 C oss C rss 0.01 25 ...