MOSFET N-CH 70V 76A TO-247AD

IXFH76N07-12

Manufacturer Part NumberIXFH76N07-12
DescriptionMOSFET N-CH 70V 76A TO-247AD
ManufacturerIXYS
SeriesHiPerFET™
IXFH76N07-12 datasheet
 

Specifications of IXFH76N07-12

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs12 mOhm @ 40A, 10VDrain To Source Voltage (vdss)70V
Current - Continuous Drain (id) @ 25° C76AVgs(th) (max) @ Id3.4V @ 4mA
Gate Charge (qg) @ Vgs240nC @ 10VInput Capacitance (ciss) @ Vds4400pF @ 25V
Power - Max360WMounting TypeThrough Hole
Package / CaseTO-247ADConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.012 Ohms
Forward Transconductance Gfs (max / Min)40 sDrain-source Breakdown Voltage70 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current76 A
Power Dissipation360 WMaximum Operating Temperature+ 175 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Vdss, Max, (v)70Id(cont), Tc=25°c, (a)76
Rds(on), Max, Tj=25°c, (?)0.012Ciss, Typ, (pf)4400
Qg, Typ, (nc)240Trr, Typ, (ns)-
Trr, Max, (ns)150Pd, (w)298
Rthjc, Max, (ºc/w)0.42Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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TM
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
, HDMOS
rr
Preliminary data sheet
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C; R
DGR
J
V
Continuous
GS
V
Transient
GSM
I
T
= 25°C (Chip capability = 125 A)
D25
C
I
T
= 119°C, limited by external leads
D119
C
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AR
C
E
AS
£ I
, di/dt £ 100 A/ms, V
dv/dt
I
S
DM
£ 150°C, R
= 2 W
T
J
G
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
M
Mounting torque
d
Weight
Symbol
Test Conditions
= 250 mA
V
V
= 0 V, I
DSS
GS
D
V
V
= V
, I
= 4 mA
GS(th)
DS
GS
D
= ±20 V
I
V
, V
= 0
GSS
GS
DC
DS
I
V
= 0.8 • V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 40 A
DS(on)
GS
D
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
TM
Family
Maximum Ratings
N06
60
N07
70
= 10 kW
N06
60
GS
N07
70
±20
±30
76
76
304
JM
100
30
2
£ V
,
5
DD
DSS
360
-55 ... +175
175
-55 ... +150
300
1.15/10 Nm/lb.in.
6
Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min.
typ.
max.
N06
60
N07
70
2.0
T
= 25°C
J
T
= 125°C
J
76 N06/N07-11
76 N06/N07-12
V
I
DSS
D25
60 V
76 A 11 mW
60 V
76 A 12 mW
70 V
76 A 11 mW
70 V
76 A 12 mW
TO-247 AD
V
V
V
V
V
V
A
A
G = Gate,
D = Drain,
S = Source,
TAB = Drain
A
A
Features
mJ
J
International standard package
V/ns
JEDEC TO-247 AD
Low R
HDMOS
DS (on)
Rugged polysilicon gate cell structure
W
Unclamped Inductive Switching (UIS)
°C
rated
°C
Low package inductance
°C
- easy to drive and to protect
Fast intrinsic Rectifier
°C
g
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
V
DC choppers
V
Temperature and lighting controls
3.4
V
Low voltage relays
±100
nA
mA
100
Advantages
mA
500
Easy to mount with 1 screw
11
mW
(isolated mounting screw hole)
12
mW
Space savings
High power density
R
DS(on)
(TAB)
TM
process
92785H (12/98)
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IXFH76N07-12 Summary of contents

  • Page 1

    ... V DSS DS DSS DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 TM Family Maximum Ratings N06 60 N07 N06 ...

  • Page 2

    ... J min. typ. max. 76 304 JM 1.5 = 25°C 150 125°C 250 ns J IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXFH 76 N07-11 IXFH 76 N07-12 TO-247 AD (IXFH) Outline ...

  • Page 3

    ... V = 15V GS 0.9 0 100 150 I - Amperes D Fig vs. Case Temperature -50 - Case Temperature - © 2000 IXYS All rights reserved IXFH 76 N06-11 IXFH 76 N06-12 300 7V 6V 250 200 150 5V 100 50 1.5 2.0 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 200 250 300 100 125 150 ° ...

  • Page 4

    ... V - Volts DS Fig. 11 Transient Thermal Impedance D=0.5 0.100 D=0.2 D=0.1 D=0.05 D=0.02 0.010 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved IXFH 76 N06-11 IXFH 76 N06-12 1000 100 10 250 300 350 200 f = 1MHz 150 C iss 100 C oss C rss 30 40 ...