IXFH40N30 IXYS, IXFH40N30 Datasheet
IXFH40N30
Manufacturer Part Number
IXFH40N30
Description
MOSFET N-CH 300V 40A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH40N30.pdf
(4 pages)
Specifications of IXFH40N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.085 Ohms
Forward Transconductance Gfs (max / Min)
25 s
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
40
Rds(on), Max, Tj=25°c, (?)
0.085
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
177
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH40N30
Manufacturer:
IXYS
Quantity:
2 000
Company:
Part Number:
IXFH40N30
Manufacturer:
SAKNEN
Quantity:
4 000
Company:
Part Number:
IXFH40N30Q
Manufacturer:
AD
Quantity:
3 340
Company:
Part Number:
IXFH40N30Q
Manufacturer:
IXYS
Quantity:
3 500
© 2000 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
DSS
GS
GSM
d
DSS
GS(th)
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
D
= 250 mA
DSS
= 4 mA
G
, V
= 0.5 I
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
£ V
J
J
FM40N30
FH40N30
(T
= 25°C
= 125°C
DSS
J
35N30
= 25°C, unless otherwise specified)
JM
,
TO-204 = 18 g, TO-247 = 6 g
IXFH/IXFM 35 N30
IXFH 40 N30
IXFM 40 N30
35N30
40N30
35N30
40N30
35N30
40N30
min.
300
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
300
300
±20
±30
140
160
300
150
300
35
40
35
40
30
5
0.100
0.085
0.088
max.
±100
200
4
1
V/ns
mJ
mA
°C
°C
°C
°C
W
nA
mA
V
V
V
V
A
A
A
A
A
A
W
W
W
V
V
TO-204 AE (IXFM)
G = Gate,
S = Source,
TO-247 AD (IXFH)
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
• Space savings
• High power density
rated
- easy to drive and to protect
power supplies
(isolated mounting screw hole)
300 V
300 V
300 V
t
V
rr
DSS
£ 200 ns
DS (on)
HDMOS
35 A 100 mW
40 A
40 A
D = Drain,
TAB = Drain
I
D25
TM
D
process
91523F (07/00)
R
85 mW
88 mW
G
DS(on)
(TAB)
1 - 4
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IXFH40N30 Summary of contents
Page 1
... DSS 0.5 I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 TM Family Maximum Ratings 300 = 1 MW 300 GS ±20 ±30 ...
Page 2
... J min. typ. max. 35N30 40N30 35N30 40N30 25° 125°C J IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 35N30 IXFH 40N30 IXFM 35N30 IXFM 40N30 TO-247 AD (IXFH) Outline ...
Page 3
... IXYS All rights reserved IXFH 35N30 IXFH 40N30 IXFM 35N30 IXFM 40N30 ...
Page 4
... Vds - Volts Fig.11 Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved Fig.8 Forward Bias Safe Operating Area Limited by R 100 Fig.10 Source Current vs. Source 0.0 0.001 ...