IXFH58N20Q IXYS, IXFH58N20Q Datasheet

IXFH58N20Q

Manufacturer Part Number

IXFH58N20Q

Description

MOSFET N-CH 200V 58A TO-247AD

Manufacturer

IXYS

Series

HiPerFET™r

Datasheet

1.IXFH58N20Q.pdf (2 pages)

Specifications of IXFH58N20Q

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

40 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

58A

Vgs(th) (max) @ Id

4V @ 4mA

Gate Charge (qg) @ Vgs

140nC @ 10V

Input Capacitance (ciss) @ Vds

3600pF @ 25V

Power - Max

300W

Mounting Type

Through Hole

Package / Case

TO-247AD

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.04 Ohms

Forward Transconductance Gfs (max / Min)

34 s

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

58 A

Power Dissipation

300 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

200

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.04

Ciss, Typ, (pf)

3600

Qg, Typ, (nc)

Trr, Typ, (ns)

Trr, Max, (ns)

200

Pd, (w)

298

Rthjc, Max, (ºc/w)

0.42

Package Style

TO-247

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH58N20Q

Manufacturer:

FREESCALE

Quantity:

310

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