STP30NM50N STMicroelectronics, STP30NM50N Datasheet

MOSFET N-CH 500V 27A TO-220

STP30NM50N

Manufacturer Part Number
STP30NM50N
Description
MOSFET N-CH 500V 27A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STP30NM50N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
115 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
94nC @ 10V
Input Capacitance (ciss) @ Vds
2740pF @ 50V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.09 Ohms
Forward Transconductance Gfs (max / Min)
23 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
27 A
Power Dissipation
190 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8790-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP30NM50N
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
STP30NM50N
Manufacturer:
ST
0
Features
1. Limited only by maximum temperature allowed
Application
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
Table 1.
September 2008
STW30NM50N
STB30NM50N
STP30NM50N
STF30NM50N
STI30NM50N
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching applications
STW30NM50N
Type
STB30NM50N
STP30NM50N
STF30NM50N
STI30NM50N
Order codes
N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET
Device summary
STB30NM50N,STI30NM50N,STF30NM50N
(@Tjmax)
550 V
550 V
550 V
550 V
550 V
V
DSS
< 0.115 Ω
< 0.115 Ω
< 0.115 Ω
< 0.115 Ω
< 0.115 Ω
R
max
DS(on)
30NM50N
30NM50N
30NM50N
30NM50N
30NM50N
Marking
D
2
PAK, I
27 A
27 A
27 A
27 A
27 A
STP30NM50N, STW30NM50N
I
D
(1)
Rev 2
2
PAK, TO-220FP, TO-220, TO-247
Figure 1.
D²PAK
TO-220
TO-220FP
Package
TO-220
TO-247
D²PAK
I²PAK
1
3
1
Internal schematic diagram
2
3
TO-247
1
2
Tape and reel
3
Packaging
Tube
Tube
Tube
Tube
TO-220FP
I²PAK
www.st.com
1 2
1
2
1/18
3
3
18

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STP30NM50N Summary of contents

Page 1

... It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N September 2008 STP30NM50N, STW30NM50N PAK, I PAK, TO-220FP, TO-220, TO-247 R DS(on max < 0.115 Ω D² ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB/I/F/P/W30NM50N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) Drain current (pulsed ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 5. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate ...

Page 5

STB/I/F/P/W30NM50N Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 6. Safe operating area for TO-247 6/18 STB/I/F/P/W30NM50N Figure 3. Thermal impedance for TO-220 / ...

Page 7

STB/I/F/P/W30NM50N Figure 8. Output characteristics I D (A) V =10V Figure 10. Transconductance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations V GS (V) V =400V ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics 8/18 STB/I/F/P/W30NM50N Figure 15. Normalized on resistance vs temperature Figure 17. Normalized B VDSS vs temperature ...

Page 9

STB/I/F/P/W30NM50N 3 Test circuits Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive waveform Figure 19. Gate charge test circuit Figure 21. Unclamped inductive ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 11

STB/I/F/P/W30NM50N Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.49 0.70 15.25 15.75 1.27 10 10.40 ...

Page 12

Package mechanical data Dim Dia 12/18 TO-220FP mechanical data mm. Min. Typ Max. 4.40 4.60 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1.00 1.15 ...

Page 13

STB/I/F/P/W30NM50N Dim øP øR S TO-247 mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Package mechanical ...

Page 14

Package mechanical data Dim 14/18 TO-262 mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 2.40 ...

Page 15

STB/I/F/P/W30NM50N Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 ...

Page 16

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 17

STB/I/F/P/W30NM50N 6 Revision history Table 9. Document revision history Date 19-Feb-2008 23-Sep-2008 Revision 1 First release 2 Document status promoted from preliminary data to datasheet. Revision history Changes 17/18 ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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