IXFH75N10 IXYS, IXFH75N10 Datasheet

MOSFET N-CH 100V 75A TO-247AD

IXFH75N10

Manufacturer Part Number
IXFH75N10
Description
MOSFET N-CH 100V 75A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH75N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Forward Transconductance Gfs (max / Min)
30 s
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
60 ns
Rise Time
60 ns
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
0.02
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH75N10
Manufacturer:
ON
Quantity:
10 000
Part Number:
IXFH75N10Q
Manufacturer:
IXYS
Quantity:
35 500
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
D
= 250 mA
DSS
= 4 mA
G
, V
= 0.5 I
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
67N10
75N10
£ V
J
J
(T
= 25°C
= 125°C
DSS
J
= 25°C, unless otherwise specified)
JM
,
IXFH/IXFM 67 N10
IXFH/IXFM 75 N10
67N10
75N10
67N10
75N10
67N10
75N10
TO-204 = 18 g, TO-247 = 6 g
min.
100
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
100
100
±20
±30
268
300
300
150
300
67
75
67
75
30
5
0.025
0.020
max.
±100
250
4
1
V/ns
mA
mJ
nA
mA
°C
°C
°C
°C
W
W
W
V
V
V
V
A
A
A
A
A
A
V
V
TO-247 AD (IXFH)
TO-204 AE (IXFM)
G = Gate,
S = Source,
Features
Applications
Advantages
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
100 V
100 V
t
V
rr
DSS
£ 200 ns
DS (on)
HDMOS
D
D = Drain,
TAB = Drain
67 A 25 mW
75 A 20 mW
I
D25
TM
G
process
91521F (10/95)
(TAB)
R
DS(on)
1 - 4

Related parts for IXFH75N10

IXFH75N10 Summary of contents

Page 1

... DSS DS DSS 0.5 I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 TM Family Maximum Ratings 100 = 1 MW 100 GS ±20 ±30 67N10 67 ...

Page 2

... JM = 25° 125°C J IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 67N10 IXFH 75N10 IXFM 67N10 IXFM 75N10 TO-247 AD (IXFH) Outline S pF ...

Page 3

... I - Amperes D Fig. 5 Drain Current vs. Case Temperature 80 75N10 67N10 -50 - Degrees C C © 2000 IXYS All rights reserved V = 10V 2.50 2.25 2.00 1.75 = 10V 1.50 1. 15V 1.00 GS 0.75 0.50 75 100 125 150 IXFH 67N10 IXFH 75N10 IXFM 67N10 IXFM 75N10 Fig ...

Page 4

... V - Volts DS Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 100 10 1 150 125 C iss 100 oss 25 C rss 0.001 0.01 Time - Seconds IXFH 67N10 ...

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