STW42N65M5 STMicroelectronics, STW42N65M5 Datasheet

MOSFET N-CH 650V 33A TO-247

STW42N65M5

Manufacturer Part Number
STW42N65M5
Description
MOSFET N-CH 650V 33A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STW42N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
79 mOhm @ 16.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
4650pF @ 100V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-247
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.07ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
0.07 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
33 A
Power Dissipation
190 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8796-5

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Features
1. Limited only by maximum temperature allowed
Application
Description
MDmesh™ V is a revolutionary Power MOSFET
technology based on an innovative proprietary
vertical process, which is combined with
STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
has extremely low on-resistance, which is
unmatched among silicon-based Power
MOSFETs, making it especially suitable for
applications which require superior power density
and outstanding efficiencies.
Table 1.
June 2009
STW42N65M5
STB42N65M5
STF42N65M5
STP42N65M5
STI42N65M5
TO-220 worldwide best R
Higher V
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Switching applications
Type
STW42N65M5
STB42N65M5
STP42N65M5
STF42N65M5
Order codes
STI42N65M5
N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET
DSS
Device summary
rating
V
T
710 V
710 V
710 V
710 V
710 V
DSS
Jmax
@
in I
DS(on)
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
R
max
DS(on)
2
PAK, TO-220, TO-220FP, D
42N65M5
42N65M5
42N65M5
42N65M5
42N65M5
Marking
33 A
33 A
33 A
33 A
33 A
Doc ID 15317 Rev 3
I
D
(1)
Figure 1.
TO-220FP
TO-220FP
Package
TO-220
TO-247
D²PAK
I²PAK
I²PAK
1
Internal schematic diagram
2
3
1 2
3
2
D²PAK
STx42N65M5
PAK and TO-247
1
3
Tape and reel
TO-247
Packaging
Tube
Tube
Tube
Tube
TO-220
1
www.st.com
2
3
1
1/18
2
3
18

Related parts for STW42N65M5

STW42N65M5 Summary of contents

Page 1

... Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies. Table 1. Device summary Order codes STB42N65M5 STF42N65M5 STI42N65M5 STP42N65M5 STW42N65M5 June 2009 2 PAK, TO-220, TO-220FP DS(on max ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STx42N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) C Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate ...

Page 5

STx42N65M5 Table 6. Switching times Symbol Parameter t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, I²PAK I D (A) 100 10 1 0.1 0 Figure 4. Safe operating area for TO-247 I D (A) 100 10 1 0.1 10 ...

Page 7

STx42N65M5 Figure 8. Output characteristics =10V Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance V GS (V) 10 ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.1 1.0 0.9 0.8 0.7 0.6 - Figure 16. Source-drain diode forward characteristics V SD (V) 1.0 0.9 0.8 0.7 0.6 0.5 T =150°C J ...

Page 9

STx42N65M5 3 Test circuits Figure 19. Switching times test circuit for resistive load D.U. Figure 21. Test circuit for inductive load switching and diode recovery times ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STx42N65M5 Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 ...

Page 12

Package mechanical data Dim øP øR S 12/18 TO-247 mechanical data mm. Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 ...

Page 13

STx42N65M5 Dim TO-220FP mechanical data ...

Page 14

Package mechanical data Dim 14/18 I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 ...

Page 15

STx42N65M5 Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 ...

Page 16

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 17

STx42N65M5 6 Revision history Table 8. Document revision history Date 16-Jan-2009 15-May-2009 12-Jun-2009 Revision 1 First release Updated figures 9, 10, 2 Figure 15 3 has been updated Doc ID 15317 Rev 3 Revision history Changes 11 17 and 17/18 ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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