IXTH30N50L2 IXYS, IXTH30N50L2 Datasheet - Page 2

MOSFET N-CH 30A 500V TO-247

IXTH30N50L2

Manufacturer Part Number
IXTH30N50L2
Description
MOSFET N-CH 30A 500V TO-247
Manufacturer
IXYS
Series
Linear L2™r
Datasheet

Specifications of IXTH30N50L2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
8100pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.200
Ciss, Typ, (pf)
8100
Qg, Typ, (nc)
240
Trr, Typ, (ns)
500
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Safe Operating Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
I
I
V
t
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
TO-268 (IXTT) Outline
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
J
= 25°C, unless otherwise specified)
V
V
Integrated gate input resistor
Resistive Switching Times
V
R
V
(TO-247, TO-3P)
Test Conditions
V
V
Repetitive, pulse width limited by T
I
I
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
DS
GS
G
= I
= I
= 10V, V
= 0Ω (External)
= 400V, I
= 0V
S
S
= 10V, I
= 0V, V
= 10V, V
, V
, -di/dt = 100A/μs, V
GS
= 0V, Note 1
DS
D
DS
D
DS
= 0.5 • I
= 25V, f = 1MHz
= 0.5A, T
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
C
DSS
, Note 1
DSS
4,931,844
5,017,508
5,034,796
= 75°C, t
R
, I
= 100V
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
p
(T
JM
= 2s
J
= 25°C, unless otherwise specified)
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Min.
Min.
Min.
200
9
6,162,665
6,259,123 B1
6,306,728 B1
8100
0.25
Typ.
Typ.
Typ.
530
115
117
240
135
500
3.5
35
94
40
58
12
0.31 °C/W
120
1.5
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
Max.
15
30
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
W
Ω
S
A
A
V
IXTH30N50L2 IXTQ30N50L2
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-3P (IXTQ) Outline
TO-247 (IXTH) Outline
6,727,585
6,771,478 B2 7,071,537
Dim.
Terminals: 1 - Gate
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
.4
2
3 - Source
7,005,734 B2
7,063,975 B2
3
IXTT30N50L2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
e
5.3
2.6
1.4
.8
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
2 - Drain
Tab - Drain
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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