IXFX160N30T IXYS, IXFX160N30T Datasheet

MOSFET N-CH 160A 300V PLUS247

IXFX160N30T

Manufacturer Part Number
IXFX160N30T
Description
MOSFET N-CH 160A 300V PLUS247
Manufacturer
IXYS
Series
GigaMOS™r
Datasheet

Specifications of IXFX160N30T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
335nC @ 10V
Input Capacitance (ciss) @ Vds
28000pF @ 25V
Power - Max
1390W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
160
Rds(on), Max, Tj=25°c, (?)
0.019
Ciss, Typ, (pf)
28000
Qg, Typ, (nc)
335
Trr, Typ, (ns)
-
Trr, Max, (ns)
-
Pd, (w)
1390
Rthjc, Max, (k/w)
0.09
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFX160N30T
Quantity:
120
GigaMOS
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 60A, Note 1
GS
DS
= 0V
DSS
= 0V
(PLUS247)
, T
J
GS
≤ 150°C
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXFK160N30T
IXFX160N30T
20..120 /4.5..27
300
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
1390
± 20
± 30
Typ.
300
300
160
440
150
300
260
40
20
10
3
6
± 200
Nm/lb.in.
Max.
5.0
50
19 mΩ
3 mA
N/lb.
V/ns
µA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
t
TO-264 (IXFK)
PLUS247 (IXFX)
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
DS(on)
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D
TAB = Drain
300V
160A
19mΩ Ω Ω Ω Ω
200ns
= Drain
(TAB)
(TAB)
DS100127(03/09)

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IXFX160N30T Summary of contents

Page 1

... GSS DSS DS DSS 10V 60A, Note 1 DS(on © 2009 IXYS CORPORATION, All rights reserved Advance Technical Information IXFK160N30T IXFX160N30T Maximum Ratings 300 = 1MΩ 300 GS ± 20 ± 30 160 440 ≤ 150° 1390 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120 /4.5..27 ...

Page 2

... BSC L 19.81 L1 3.81 Q 5.59 R 4.32 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXFK160N30T IXFX160N30T Inches Max. Min. Max. 5.13 .190 .202 2.89 .100 .114 2.10 .079 .083 1.42 .044 .056 2.69 .094 .106 3.09 .114 ...

Page 3

... V = 10V GS 2.4 2.2 I 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 180 160 140 120 100 -50 - Degrees Centigrade C IXFK160N30T IXFX160N30T 80A Value D = 160A 80A D 75 100 125 150 75 100 125 150 ...

Page 4

... Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 1,000 R Limit DS 100 150º 25ºC C Single Pulse Volts DS IXFK160N30T IXFX160N30T 40ºC J 25ºC 125ºC 120 140 160 180 200 250 300 350 25µs 100µs 1ms 100 1000 IXYS REF: F_160N30T(9E)3-23-09 ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFK160N30T IXFX160N30T 0.1 1 IXYS REF: F_160N30T(9E)3-23-09 10 ...

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