IXFX48N50Q IXYS, IXFX48N50Q Datasheet
IXFX48N50Q
Manufacturer Part Number
IXFX48N50Q
Description
MOSFET N-CH 500V 48A PLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFX48N50Q.pdf
(4 pages)
Specifications of IXFX48N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
7000pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
48 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
48
Rds(on), Max, Tj=25°c, (?)
0.10
Ciss, Typ, (pf)
8000
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
481
Rthjc, Max, (ºc/w)
0.26
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
High dV/dt, Low t
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 2003 IXYS All rights reserved
DM
GSS
DSS
D25
AR
JM
L
GSM
AR
AS
J
stg
DSS
GS(th)
DS(on)
DSS
DGR
GS
D
d
V
V
V
V
Note 1
Test Conditions
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
S
GS
GS
GS
DS
C
C
C
C
C
C
GS
DS
J
J
J
= V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= ±20 V, V
= V
= 0 V
= 10 V, I
DM
GS
rr
DSS
, di/dt ≤ 100 A/µs, V
, I
TM
D
D
= 250uA
= 4mA
D
= 0.5 • I
DS
G
= 2 Ω
= 0
D25
TO-264
PLUS 247
TO-264
GS
= 1 MΩ
DD
(T
T
44N50
48N50
≤ V
J
J
= 25°C, unless otherwise specified)
= 125°C
DSS
JM
IXFK/IXFX 48N50Q 500 V 48 A 100 mΩ Ω Ω Ω Ω
IXFK/IXFX 44N50Q 500 V 44 A 120 mΩ Ω Ω Ω Ω
44N50
48N50
44N50
48N50
500
min.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
0.4/6
Maximum Ratings
typ.
500
500
±20
±30
176
192
500
150
300
2.5
44
48
48
60
15
max.
Nm/lb.in.
±100 nA
120 mΩ
100 mΩ
100 µA
10
4.0 V
2 mA
6
V/ns
mJ
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
g
g
J
TO-264 AA (IXFK)
G = Gate
S = Source
Features
Applications
Advantages
PLUS 247
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
Molding epoxies meet UL 94 V-0
flammability classification
AC motor control
Temperature and lighting controls
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
PLUS 247
mounting
Space savings
High power density
t
switching (UIS) rated
V
rr
DSS
≤ ≤ ≤ ≤ ≤ 250 ns
DS (on)
G
TM
TM
D
(IXFX)
G
package for clip or spring
D
I
D25
S
TAB = Drain
D = Drain
DS98612D(08/03)
g
process
R
DS(on)
(TAB)
(TAB)
Related parts for IXFX48N50Q
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXFX48N50Q Summary of contents
Page 1
... DS DSS 0.5 • I DS(on D25 Note 1 © 2003 IXYS All rights reserved IXFK/IXFX 48N50Q 500 100 mΩ Ω Ω Ω Ω IXFK/IXFX 44N50Q 500 120 mΩ Ω Ω Ω Ω Maximum Ratings 500 = 1 MΩ 500 GS ±20 ±30 44N50 44 48N50 48 44N50 ...
Page 2
... A/µ Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 3
... Volts D S Fig Norm alized to I DS(on) Value vs 10V 3.1 GS 2.8 2.5 2.2 1.9 1.6 1 Amperes D © 2003 IXYS All rights reserved 120 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 D25 125º 25º ...
Page 4
... V - Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 5 25ºC J 0.8 0 ...