IXFH20N80Q IXYS, IXFH20N80Q Datasheet
IXFH20N80Q
Manufacturer Part Number
IXFH20N80Q
Description
MOSFET N-CH 800V 20A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH20N80Q.pdf
(2 pages)
Specifications of IXFH20N80Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
420 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.42 Ohms
Forward Transconductance Gfs (max / Min)
19 s
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
0.42
Ciss, Typ, (pf)
5100
Qg, Typ, (nc)
150
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH20N80Q
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH20N80Q
Manufacturer:
IXYS
Quantity:
15 500
HiPerFET
Power MOSFETs
Q-Class
Preliminary Data
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
D25
DM
AR
GSS
DSS
J
JM
stg
L
GS(th)
DGR
GS
GSM
AR
AS
D
DSS
DS(on)
DSS
d
g
, High dv/dt
Test Conditions
V
V
V
V
V
V
Pulse test, t
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
S
GS
GS
GS
GS
J
J
C
C
C
C
C
J
C
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
GS
DSS
, di/dt 100 A/ s, V
, I
D
D
DC
D
= 250 A
= 4 mA
, V
= 0.5 • I
300 s, duty cycle d
G
= 2
DS
= 0
D25
GS
= 1 M
DD
T
T
(T
TO-247
TO-268
TO-264
J
J
J
= 25 C
= 125 C
V
= 25 C, unless otherwise specified)
DSS
,
JM
2 %
TO-247
TO-264
min.
800
IXFH20N80Q
IXFK20N80Q
IXFT20N80Q
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
0.9/6 Nm/lb.in.
800
800
360
150
300
1.5
20
30
20
80
20
45
10
5
6
4
max.
0.42
200
4.5
25
1
V/ns
mA
mJ
nA
W
V
V
V
V
V
V
A
A
A
C
A
C
C
C
g
g
g
J
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
TO-264 AA (IXFK)
G = Gate
S = Source
Features
Advantages
IXYS advanced low Q
International standard packages
classification
Low R
Avalanche energy and current rated
Fast intrinsic rectifier
Easy to mount
Space savings
High power density
Epoxy meet UL 94 V-0, flammability
V
I
R
t
D25
rr
DSS
DS(on)
DS (on)
250 ns
G
G
low Q
D
S
=
=
= 0.42
S
g
TAB = Drain
DS98616A(12/02)
g
800 V
process
20 A
D (TAB)
(TAB)
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IXFH20N80Q Summary of contents
Page 1
... GS(th GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle d © 2002 IXYS All rights reserved IXFH20N80Q IXFK20N80Q IXFT20N80Q Maximum Ratings 800 = 1 M 800 1 DSS 360 -55 ... +150 150 -55 ... +150 300 TO-247 1.13/10 Nm/lb.in. TO-264 0.9/6 Nm/lb.in. TO-247 6 TO-268 ...
Page 2
... I 34 DSS D D25 80 0.35 0.25 0.15 Characteristic Values ( unless otherwise specified) J min. typ. max 1.5 250 1 = 100 4,835,592 4,881,106 4,850,072 4,931,844 IXFH20N80Q IXFK20N80Q IXFT20N80Q TO-247 AD (IXFH) Outline Dim. Millimeter Inches n s Min. Max. Min. A 4.7 5.3 .185 2.2 2.54 .087 ...