IXFX64N60P IXYS, IXFX64N60P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFX64N60P
Manufacturer Part Number
IXFX64N60P
Description
MOSFET N-CH 600V 64A PLUS247
Specifications of IXFX64N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
96 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
64A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
1040W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.096 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
63 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
64 A
Power Dissipation
1040000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
64
Rds(on), Max, Tj=25°c, (?)
0.096
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
200
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1040
Rthjc, Max, (ºc/w)
0.12
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
F
M
Weight
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
SOLD
C
DS(on)
© 2006 IXYS All rights reserved
DSS
DGR
GSS
GSM
AR
AS
D
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting force (PLUS247)
Mounting torque (TO-264)
TO-264
V
S
PLUS247
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
= 0.5 I
G
= 2 Ω
DS
= 0
D25
, Note 1
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
,
IXFK 64N60P
IXFX 64N60P
600
Min.
3.0
20..120/4.5..25
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
1040
600
600
±30
±40
150
150
300
260
3.5
64
64
80
20
10
6
±200
1000
Max.
5.0
25
96
V/ns
N/lb
m Ω
° C
° C
mJ
nA
µA
µA
° C
°C
°C
W
g
g
V
V
V
V
V
V
A
A
A
J
V
I
R
t
TO-264 (IXFK)
Features
l
l
l
l
Advantages
l
l
l
PLUS247 (IXFX)
D25
rr
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G
G = Gate
S = Source
D
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D
Tab = Drain
(TAB)
600 V
64
96
200 ns
DS99442E(01/06)
= Drain
(TAB)
mΩ Ω Ω Ω Ω
A
Related parts for IXFX64N60P
IXFX64N60P Summary of contents
... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS All rights reserved IXFK 64N60P IXFX 64N60P Maximum Ratings 600 = 1 MΩ 600 GS ±30 ±40 64 150 3.5 ≤ DSS 1040 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..25 1.13/10 Nm/lb.in Characteristic Values Min ...
... Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
... V - Volts DS Fig Normalized to I DS(on) Drain Current 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 160 140 120 100 3.1 = 10V GS 2.8 7V 2.5 2.2 6V 1.9 1.6 1 0.7 0 -50 = 32A 125º 25ºC ...
... Intrinsic Diode 140 120 100 125º 0.3 0.4 0.5 0.6 0.7 0 Volts SD Fig. 11. Capacitance 100,000 MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 130 120 110 100 5 25º 0.9 1 1.1 1.2 ...
... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds 1 10 ...
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