IXFX80N50P IXYS, IXFX80N50P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFX80N50P
Manufacturer Part Number
IXFX80N50P
Description
MOSFET N-CH 500V 80A PLUS247
Specifications of IXFX80N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
197nC @ 10V
Input Capacitance (ciss) @ Vds
12700pF @ 25V
Power - Max
1040W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.065 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
70 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
80 A
Power Dissipation
1040000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.065
Ciss, Typ, (pf)
12700
Qg, Typ, (nc)
197
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1040
Rthjc, Max, (ºc/w)
0.12
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
F
M
Weight
Symbol
(T
BV
V
I
I
R
D25
L
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GSM
GSM
AR
AS
D
SOLD
C
GS(th)
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
Continuous
T
Lead Current Limit, RMS
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting force (PLUS247)
Mounting torque (TO-264)
TO-264
PLUS247
Test Conditions
V
V
V
V
V
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ± 30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 8 mA
= 500 µA
G
= 0.5 I
, V
= 2 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXFK 80N50P
IXFX 80N50P
,
500
Min.
20..120/4.5..25
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
1040
± 40
± 30
500
500
200
150
300
260
3.5
75
80
80
80
20
10
± 200
6
Max.
5.0
25
65
2
V/ns
N/lb
mA
mJ
mΩ
° C
° C
nA
µA
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
TO-264 (IXFK)
PLUS247 (IXFX)
Features
l
l
l
Advantages
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
G = Gate
D = Drain
DS(on)
DSS
G
D
D
S
S
≤ ≤ ≤ ≤ ≤
= 500
=
≤ ≤ ≤ ≤ ≤ 200
S = Source
Tab = Collector
65 mΩ Ω Ω Ω Ω
80
D (TAB)
DS99437E(03/06)
D (TAB)
ns
A
V
Related parts for IXFX80N50P
IXFX80N50P Summary of contents
... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS All rights reserved IXFK 80N50P IXFX 80N50P Maximum Ratings 500 = 1 MΩ 500 GS ± 40 ± 200 3.5 ≤ DSS 1040 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..25 1.13/10 Nm/lb.in Characteristic Values Min ...
... Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C unless otherwise specified) J Min ...
... Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 100 I - Amperes D © 2006 IXYS All rights reserved ° C 180 10V 160 8V 140 7V 120 100 ° C 3.4 3.1 7V 2.8 2.5 6V 2.2 1.9 1.6 1 ...
... T = 125 0.4 0.6 0 Volts S D Fig. 11. Capacitance 100000 f = 1MHz 10000 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 100 6 ° 1.2 1.4 1.6 1000 C iss 100 C oss 10 C rss ...
... IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 0.001 0.01 Pulse Width - Seconds IXFK 80N50P IXFX 80N50P 0 ...
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