IXFK34N80 IXYS, IXFK34N80 Datasheet
IXFK34N80
Manufacturer Part Number
IXFK34N80
Description
MOSFET N-CH 800V 34A TO-264AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFX34N80.pdf
(2 pages)
Specifications of IXFK34N80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
560W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohms
Forward Transconductance Gfs (max / Min)
35 s
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
34 A
Power Dissipation
560 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
34
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
7500
Qg, Typ, (nc)
270
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
TO-264
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK34N80
Manufacturer:
IXYS
Quantity:
200
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Single MOSFET Die
Avalanche Rated
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
DM
AR
D25
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
d
DS(on)
V
Note 1
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
V
V
Test Conditions
V
S
V
V
C
C
C
C
C
C
J
J
J
GS
GS
DS
GS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= V
= 0 V, I
= 10 V, I
= ±20 V, V
= V
= 0 V
DM
TM
GS
, di/dt £ 100 A/ms, V
DSS
, I
D
D
= 3mA
= 8mA
D
= 0.5 • I
G
DS
= 2 W
= 0
TO-264
PLUS 247
TO-264
D25
GS
= 1 MW
DD
£ V
T
T
(T
J
J
DSS
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
JM
min.
800
IXFK 34N80
IXFX 34N80
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
0.9/6 Nm/lb.in.
800
800
±20
±30
136
560
150
300
34
36
64
3
5
max.
0.24 W
±200 nA
100 mA
10
5.0 V
6
2 mA
V/ns
mJ
°C
°C
°C
°C
W
V
V
V
V
A
A
A
g
g
V
J
TO-264 AA (IXFK)
G = Gate
S = Source
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247
• Space savings
• High power density
PLUS 247
rated
- easy to drive and to protect
power supplies
mounting
V
I
R
t
D25
rr
DS (on)
DS(on)
DSS
G
£ 250 ns
TM
TM
D
G
HDMOS
(IXFX)
package for clip or spring
D
S
= 800 V
=
= 0.24 W
TM
D = Drain
TAB = Drain
process
34 A
98560B (6/99)
(TAB)
(TAB)
1 - 2
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IXFK34N80 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFK 34N80 IXFX 34N80 Maximum Ratings 800 = 1 MW 800 GS ±20 ±30 34 136 £ DSS 560 -55 ... +150 150 -55 ...
Page 2
... J min. typ. max 136 A 1.5 V 250 ns = 100 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXFK 34N80 IXFX 34N80 PLUS247 TM (IXFX) Outline Dim. Millimeter Inches Min. Max. ...