TPCA8019-H(TE12LQM Toshiba, TPCA8019-H(TE12LQM Datasheet

TPCA8019-H(TE12LQM

Manufacturer Part Number

TPCA8019-H(TE12LQM

Description

MOSFET N-CH 30V 45A SOP-8 ADV

Manufacturer

Toshiba

Datasheet

1.TPCA8019-HTE12LQM.pdf (7 pages)

Specifications of TPCA8019-H(TE12LQM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.1 mOhm @ 23A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

45A

Vgs(th) (max) @ Id

2.5V @ 1mA

Gate Charge (qg) @ Vgs

66nC @ 10V

Input Capacitance (ciss) @ Vds

6150pF @ 10V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

2-5Q1A

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0031 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

45 A

Power Dissipation

45 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

TPCA8019-H(TE12LQM

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High-Efficiency DC/DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

High-speed switching

Small gate charge: Q

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)

(Tc=25℃) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

DSS

(Tc=25℃)

= 15.5 nC (typ.)

(Note 2a)

(Note 2b)

= 1.5 to 2.5 V (V

(t = 10 s)

(Note 1)

(Note 3)

= 10 μA (max) (V

TPCA8019-H

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 130 S (typ.)

stg

= 2.3 mΩ (typ.)

= 10 V, I

= 30 V)

−55 to 150

Rating

±20

135

263

150

2.8

1.6

3.4

= 1 mA)

Unit

°C

Weight: 0.069 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

0.95±0.05

1,2,3:SOURCE 4:GATE

5,6,7,8:DRAIN

0.5±0.1

1.27

4.25±0.2

0.05 S

5.0±0.2

TPCA8019-H

0.4±0.1

2-5Q1A

2007-12-26

―

0.8±0.1

1.1±0.2

0.05 M A

0.15±0.05

0.595

0.166±0.05

Unit: mm

Related parts for TPCA8019-H(TE12LQM

TPCA8019-H(TE12LQM Summary of contents

Page 1

... 2 1 263 3 150 °C ch −55 to 150 T °C stg 1 TPCA8019-H Unit: mm 0.4±0.1 1.27 0.5±0.1 0. 0.15±0.05 4 0.595 1 5.0±0.2 A 0.95±0.05 0.166±0.05 0. 1.1±0.2 4 4.25±0 0.8±0.1 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) ...

Page 2

... Symbol Max Unit R 2.78 °C/W th (ch-c) (Tc=25℃) R 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCA8019-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2007-12-26 ...

Page 3

... Q g ∼ − gs1 ∼ − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8019-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.5 2.5 ⎯ 3.1 4.1 ⎯ 2.3 3.1 ⎯ 65 130 ⎯ ...

Page 4

... Drain-source voltage V 0.4 0.3 0.2 0 (V) Gate-source voltage V 10 Common source Ta = 25°C Pulse test 1 0.1 1000 4 TPCA8019-H I – Common source 3.5 3 25°C Pulse test 4.5 3.4 3.3 3 – Common source Ta = 25°C Pulse test ...

Page 5

... Common source Ta = 25°C Pulse test 100 10 1 −0.2 120 160 0 C) Drain-source voltage V ° 3 2.5 2.0 1.5 1.0 Common source 0 Pulse test 0 −80 −40 100 (V) Ambient temperature TPCA8019-H I – 4 −0.4 −0.6 −0.8 −1.0 ( – 120 160 C) ° 2007-12-26 ...

Page 6

... I D max (Pulse =1ms* 100 t =10ms Single - pulse 1 Ta=25℃ Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain-source voltage – 0.01 0 Pulse width t ( 160 C) ° 100 (V) 6 TPCA8019-H (2) (1) (3) Single - pulse 100 1000 P – 120 160 Case temperature ° C 2007-12-26 ...

Page 7

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCA8019-H 2007-12-26 ...

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