AO3419 Alpha & Omega Semiconductor Inc, AO3419 Datasheet
AO3419
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AO3419 Summary of contents
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... AO3419 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3419/L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications ESD protected. AO3419 and AO3419L are electrically identical ...
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... AO3419 Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO3419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -9.0V -10.0V -8.0V 20 -7.0V -6. (Volts) DS Fig 1: On-Region Characteristics 160 140 V GS 120 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 140 120 100 80 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...
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... AO3419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 I =-3. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 limited 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =90°C 0.1 Single Pulse 0.01 0.00001 0.0001 Alpha & ...