AO3418 Alpha & Omega Semiconductor Inc, AO3418 Datasheet
AO3418
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AO3418 Summary of contents
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... AO3418 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3418/L uses advanced trench technology to provide excellent R , very low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418 and AO3418L are electrically identical ...
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... AO3418 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO3418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10V 3. (Volts) DS Fig 1: On-Region Characteristics 200 175 150 V =2.5V GS 125 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd =2. 1.8 1.6 1.4 1.2 =4.5V ...
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... AO3418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =3. (nC) g Figure 7: Gate-Charge Characteristics T =150°C 100.0 J(Max) T =25°C A 10.0 R DS(ON) limited 1ms 0.1s 10ms 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =90°C/W θ ...