AO3409 Alpha & Omega Semiconductor Inc, AO3409 Datasheet
AO3409
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AO3409 Summary of contents
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... AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3409/L uses advanced trench technology to provide excellent R and low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications. AO3409 and AO3409L are electrically identical. -RoHS Compliant ...
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... AO3409 Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO3409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V (Volts) DS Fig 1: On-Region Characteristics 250 200 150 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 250 200 150 100 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 -8V 8 -6V 6 -5.5V ...
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... AO3409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V =-2. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° 10.0 DS(ON) limited 0.1s 1.0 1s 10s 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =90°C 0.1 Single Pulse 0.01 ...