BS170RLRAG ON Semiconductor, BS170RLRAG Datasheet

BS170RLRAG

Manufacturer Part Number

BS170RLRAG

Description

MOSFET N-CH 60V 500MA TO-92

Manufacturer

ON Semiconductor

Type

Small Signalr

Datasheets

1.BS170RLRAG.pdf (4 pages)

2.BS170G.pdf (4 pages)

Specifications of BS170RLRAG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

5 Ohm @ 200mA, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

500mA

Vgs(th) (max) @ Id

3V @ 1mA

Input Capacitance (ciss) @ Vds

60pF @ 10V

Power - Max

350mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

5 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

0.2 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.5 A

Power Dissipation

350 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

5Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±20V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Package Type

TO-92

N/A

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BS170RLRAGOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BS170RLRAG

Manufacturer:

Quantity:

4 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BS170RLRAG

Manufacturer:

ON Semiconductor

Quantity:

6 400

Company:

Meier Automation Equipment Co., Limited

Part Number:

BS170RLRAG

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 4
Download datasheet (58Kb)

BS170

Small Signal MOSFET

500 mA, 60 Volts

N−Channel TO−92 (TO−226)

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

NOTE: The Power Dissipation of the package may result in a lower continuous

*For additional information on our Pb−Free strategy and soldering details, please

August, 2005 − Rev. 5

MAXIMUM RATINGS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Drain −Source Voltage

Gate−Source Voltage

Drain Current (Note)

Total Device Dissipation @ T

Operating and Storage Junction

Pb−Free Package is Available*

− Continuous

− Non−repetitive (t

Temperature Range

drain current.

Rating

≤ 50 ms)

Preferred Device

= 25°C

Symbol

GSM

, T

stg

−55 to

Value

+150

± 20

± 40

350

0.5

Unit

Vdc

Vpk

Adc

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

BS170 = Device Code

(Note: Microdot may be in either location)

1 2

ORDERING INFORMATION

500 mA, 60 Volts

MARKING DIAGRAM

& PIN ASSIGNMENT

= Assembly Location

= Year

= Work Week

= Pb−Free Package

http://onsemi.com

Drain

DS(on)

AYWWG

N−Channel

BS170

Gate

TO−92 (TO−226)

Publication Order Number:

= 5.0 W

STYLE 30

CASE 29

Source

BS170/D

Related parts for BS170RLRAG

BS170RLRAG Summary of contents

Page 1

... NOTE: The Power Dissipation of the package may result in a lower continuous drain current. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 5 ...

Page 2

... Adc) See Figure Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device BS170 BS170G BS170RLRA BS170RLRAG BS170RLRM BS170RLRMG BS170RLRP BS170RLRPG BS170RL1 BS170RL1G BS170ZL1 BS170ZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 3

V in PULSE GENERATOR 1.0 MW Figure 1. Switching Test Circuit 2.0 1.6 1.2 0.8 0 JUNCTION TEMPERATURE (°C) J Figure 3. V Normalized versus Temperature GS(th) 2.0 ...

Page 4

... LEAD DIMENSION IS UNCONTROLLED IN P AND SECTION X−X N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 Y14.5M, 1982. IS UNCONTROLLED. BEYOND DIMENSION K MINIMUM. INCHES ...

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