AOD444 Alpha & Omega Semiconductor Inc, AOD444 Datasheet

MOSFET N-CH 60V 12A TO-252

AOD444

Manufacturer Part Number
AOD444
Description
MOSFET N-CH 60V 12A TO-252
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AOD444

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 30V
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1108-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AOD444
Manufacturer:
AO
Quantity:
40 000
Part Number:
AOD444
Manufacturer:
ST
0
Part Number:
AOD444
Manufacturer:
AOS/万代
Quantity:
20 000
Rev 0: Aug 2009
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
D
The AOD444/AOI444 combine advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
in PWM, load switching and general purpose applications.
General Description
TopView
G
DS(ON)
B
A
Parameter
C
G
TO252
DPAK
C
T
T
T
T
T
T
T
T
. Those devices are suitable for use
C
C
A
A
C
C
A
A
S
=25°C
=70°C
=25°C
=70°C
=25°C
=100°C
=25°C
=100°C
D
Bottom View
C
A
A D
A
=25°C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
S
G
Symbol
V
V
I
I
I
I
E
P
P
T
Symbol
D
DM
DSM
AS
TopView
J
DS
GS
AS
D
DSM
www.aosmd.com
, T
, I
R
R
, E
AR
STG
θJA
θJC
AR
Product Summary
V
I
R
R
100% UIS Tested
100% Rg Tested
D
TO-251A
G
DS
DS(ON)
DS(ON)
IPAK
(at V
D
17.4
Typ
50
4
(at V
GS
(at V
S
=10V)
GS
GS
Maximum
-55 to 175
Bottom View
=10V)
= 4.5V)
±20
30
2.1
1.3
60
12
19
18
20
10
9
4
3
D
AOD444/AOI444
60V N-Channel MOSFET
S
Max
7.5
30
60
D
G
G
60V
12A
< 60mΩ
< 85mΩ
Units
Units
°C/W
°C/W
°C/W
mJ
°C
W
W
Page 1 of 6
V
V
A
A
A
D
S

Related parts for AOD444

AOD444 Summary of contents

Page 1

... General Description The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low R . Those devices are suitable for use DS(ON) in PWM, load switching and general purpose applications. TO252 DPAK TopView Bottom View Absolute Maximum Ratings T =25°C unless otherwise noted ...

Page 2

... Ratings are based on low frequency and duty cycles to keep initial J(MAX) and case to ambient. θJC 2 FR-4 board with 2oz. Copper still air environment with T www.aosmd.com AOD444/AOI444 Min Typ Max =55°C ...

Page 3

... V =10V Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 I =12A D 1.0E+00 40 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AOD444/AOI444 25°C 125° (Volts =10V GS I =12A =4. = 100 125 150 175 200 0 Temperature (°C) ...

Page 4

... DC 10ms 100 0.0001 Figure 10: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse .R θJC 40 0.001 0.01 0.1 Pulse Width (s) www.aosmd.com AOD444/AOI444 C iss C oss C rss (Volts) DS Figure 8: Capacitance Characteristics T =175°C J(Max) T =25°C ...

Page 5

... Figure 15: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse .R θJA 40 Single Pulse 0.01 0.1 1 Pulse Width (s) www.aosmd.com AOD444/AOI444 50 75 100 125 150 T (°C) CASE Figure 13: Power De-rating (Note F) T =25° ...

Page 6

... DUT Resistive Switching Test Circuit & W aveforms RL Vds + DUT Vdd VDC - Vgs d(on 1 Vds + Vgs Vdd VDC - Id Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs Isd Vdd VDC - Vds www.aosmd.com AOD444/AOI444 AOD444/AOI4 Qg Qgd Charge 90% 10 d(off) t off DSS dI/ Vdd Page ...

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