IPD090N03LG Infineon Technologies, IPD090N03LG Datasheet - Page 11

• Manufacturer Part Number: IPD090N03LG
• Description: MOSFET N-CH 30V 40A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD090N03LG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 15V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD090N03LGINTR; IPD090N03LGXT; SP000236950

IPD090N03L G
IPF090N03L G
IPS090N03L G
IPU090N03L G
Package Outline
PG-TO251-3
PG-TO251-3-11: Outline
PG-TO251-3-21: Outline
Rev. 1.06
page 11
2008-04-15