IPD060N03LG Infineon Technologies, IPD060N03LG Datasheet - Page 5

• Manufacturer Part Number: IPD060N03LG
• Description: MOSFET N-CH 30V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD060N03LG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 15V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD060N03LGINTR; IPD060N03LGXT; SP000236948

Rev. 1.03
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
120
100
100
80
60
40
20
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
10 V
j
=25 °C
j
GS
DS
|>2|I
1
5 V
D
|R
4.5 V
1
DS(on)max
2
175 °C
V
V
GS
DS
[V]
[V]
3
25 °C
2
4 V
4
2.8 V
3.5 V
3.2 V
3 V
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
100
20
16
12
80
60
40
20
D
=f(I
8
4
0
0
); T
0
0
3 V
D
j
); T
=25 °C
3.2 V
GS
IPS060N03L G
IPD060N03L G
j
=25 °C
20
20
3.5 V
40
40
I
I
D
D
[A]
[A]
60
60
IPU060N03L G
IPF060N03L G
4 V
11.5 V
80
10 V
80
4.5 V
5 V
2008-04-15
100
100