AO3404A Alpha & Omega Semiconductor Inc, AO3404A Datasheet
AO3404A
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AO3404A Summary of contents
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... AO3404A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3404A/L uses advanced trench technology to provide excellent R and low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance ...
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... AO3404A Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO3404A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V (Volts) DS Fig 1: On-Region Characteristics =4. =10V (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS ...
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... AO3404A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =15V DS I =5. (nC) g Figure 7: Gate-Charge Characteristics 100.0 10.0 R DS(ON) limited 1.0 10s 0.1 T =150°C J(Max) T =25°C A 0.0 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =125°C/W θJA 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET ...