MOSFET P-CH 20V 460MA SOT523

 

DMG1013T-7

Manufacturer Part NumberDMG1013T-7
DescriptionMOSFET P-CH 20V 460MA SOT523
ManufacturerDiodes Inc
DMG1013T-7 datasheets

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Specifications of DMG1013T-7

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs700 mOhm @ 350mA, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C460mAVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs0.622nC @ 4.5VInput Capacitance (ciss) @ Vds59.76pF @ 16V
Power - Max270mWMounting TypeSurface Mount
Package / CaseSOT-523Transistor PolarityP-Channel
Resistance Drain-source Rds (on)1 OhmsDrain-source Breakdown Voltage- 20 V
Continuous Drain Current- 0.46 APower Dissipation0.27 W
Maximum Operating Temperature- 55 CMounting StyleSMD/SMT
Minimum Operating Temperature+ 150 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesDMG1013T-7
DMG1013T-7DITR
Q4793597		  
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Electrical Characteristics
@T
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
= 25°C
J
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
4. Short duration pulse test used to minimize self-heating effect.
1.5
V
= -8.0V
GS
1.2
V
= -4.5V
GS
V
= -3.0V
GS
0.9
V
= -2.5V
GS
0.6
0.3
V
= -1.2V
GS
0
0
1
2
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristic
DMG1013T
Document number: DS31784 Rev. 4 - 2
= 25°C unless otherwise specified
A
Symbol
Min
Typ
-20
-
BV
DSS
-
-
I
DSS
I
-
-
GSS
-0.5
-
V
GS(th)
0.5
-
0.7
R
DS (ON)
1.0
-
0.9
|Y
|
fs
-0.8
V
SD
-
59.76
C
iss
-
12.07
C
oss
-
6.36
C
rss
-
622.4
Q
g
-
100.3
Q
gs
-
132.2
Q
gd
5.1
t
-
D(on)
8.1
-
t
r
28.4
t
-
D(off)
-
20.7
t
f
10
8
6
V
= -2.0V
GS
4
2
V
= -1.5V
GS
0
3
4
5
0
2 of 6
www.diodes.com
DMG1013T
Max
Unit
Test Condition
-
V
V
= 0V, I
= -250μA
GS
D
-100
nA
V
= -20V, V
= 0V
DS
GS
μA
±2.0
V
= ±4.5V, V
= 0V
GS
DS
-1.0
V
V
= V
, I
= -250μA
DS
GS
D
0.7
V
= -4.5V, I
= -350mA
GS
D
Ω
0.9
V
= -2.5V, I
= -300mA
GS
D
1.3
V
= -1.8V, I
= -150mA
GS
D
-
S
V
= -10V, I
= -250mA
DS
D
-1.2
V
V
= 0V, I
= -150mA
GS
S
-
pF
V
= -16V, V
= 0V,
DS
GS
-
pF
f = 1.0MHz
-
pF
-
pC
V
= -4.5V, V
= -10V,
GS
DS
-
pC
I
= -250mA
D
-
pC
-
ns
V
= -10V, V
= -4.5V,
DD
GS
-
ns
R
= 47Ω, R
= 10Ω,
L
G
-
ns
I
= -200mA
D
-
ns
V
= -5V
DS
T = 150°C
A
T = 85°C
T = 125°C
A
A
T = 25°C
A
T = -55°C
A
0.5
1
1.5
2
2.5
-V
, GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
October 2009
© Diodes Incorporated
3

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