BSS138 Fairchild Semiconductor, BSS138 Datasheet - Page 3

• Manufacturer Part Number: BSS138
• Description: MOSFET N-CH 50V 220MA SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of BSS138

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 2.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 27pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 220mA
• Power Dissipation: 360mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.22 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 220mA
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 3.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 360mW
• No. Of Pins: 3
• Gate-source Voltage: 20V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS138TR

Typical Characteristics
1.8
1.6
1.4
1.2
0.8
0.6
0.8
0.6
0.4
0.2
0.6
0.5
0.4
0.3
0.2
0.1
2
1
Figure 3. On-Resistance Variation with
1
0
0
-50
Figure 1. On-Region Characteristics.
0.5
0
Figure 5. Transfer Characteristics.
I
V
V
D
GS
GS
= 220mA
-25
V
= 10V
= 10V
DS
0.5
1
= 10V
V
V
DS
GS
T
6.0V
0
J
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
1.5
1
4.5V
25
3.5V
1.5
50
T
2
A
= -55
3.0V
o
75
C
2.5
2
o
125
100
C)
2.5V
o
C
2.5
25
3
o
2.0V
125
C
150
3.5
3
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.1
4.1
3.5
2.9
2.3
1.7
1.1
0.5
3.4
2.6
2.2
1.8
1.4
0.6
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
3
1
0
0
0
V
T
Drain Current and Gate Voltage.
GS
A
= 25
V
= 0V
GS
o
Gate-to-Source Voltage.
= 2.5V
C
0.2
V
SD
0.2
2
V
, BODY DIODE FORWARD VOLTAGE (V)
3.0V
GS
T
A
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
I
D
, DRAIN CURRENT (A)
o
3.5V
C
0.4
4
T
A
= 125
0.6
4.0V
25
o
C
o
C
0.6
6
4.5V
0.8
-55
I
D
o
C
= 110mA
6.0V
0.8
8
1
BSS138 Rev C(W)
10V
1.2
10
1