ZXMN10A08E6TA Diodes Zetex, ZXMN10A08E6TA Datasheet - Page 4

• Manufacturer Part Number: ZXMN10A08E6TA
• Description: MOSFET N-CH 100V 1.5A SOT-23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A08E6TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 405pF @ 50V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A08E6TR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 4)
Forward Transconductance (Notes 4 & 6)
Diode Forward Voltage (Note 4)
Reverse recovery time (Note 6)
Reverse recovery charge (Note 6)
DYNAMIC CHARACTERISTICS (
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 5)
Turn-On Rise Time (Note 5)
Turn-Off Delay Time (Note 5)
Turn-Off Fall Time (Note 5)
Notes:
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
4. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
5. Switching characteristics are independent of operating junction temperatures.
6. For design aid only, not subject to production testing.
Characteristic
Note 6
@T
)
A
= 25°C unless otherwise specified
V
Symbol
R
V
(BR)DSS
DS (ON)
t
t
I
I
C
V
C
C
Q
Q
D(on)
D(off)
GS(th)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
rr
iss
fs
gs
gd
r
f
rr
g
g
www.diodes.com
Min
100
4 of 8
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2
0.87
28.2
14.2
Typ
405
5.0
4.2
7.7
1.8
2.1
3.4
2.2
3.2
27
32
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8
±100
Max
0.25
0.30
0.95
0.5
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4
Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f = 1MHz
V
I
V
I
V
I
D
D
S
F
D
D
D
DS
GS
GS
GS
DS
DS
DS
DS
DD
= 250μA, V
= 1.2A, di/dt = 100A/μs
= 3.2A, V
= 1.2A
= 1.2A
= 250μA, V
= 1.2A, R
= 100V, V
= 15V, I
= 50V, V
= 50V, V
= 50V, V
= ±20V, V
= 10V, I
= 6V, I
= 30V, V
ZXMN10A08E6
Test Condition
D
GS
G
D
D
= 2.6A
GS
GS
GS
GS
GS
DS
≅ 6.0Ω
= 3.2A
GS
= 3.2A
DS
= 0V
= 0V
= 5V
= 10V
= 10V
= 0V
= V
= 0V
= 0V
© Diodes Incorporated
GS
October 2009