AOD407 Alpha & Omega Semiconductor Inc, AOD407 Datasheet

MOSFET P-CH -60V -12A TO-252

AOD407

Manufacturer Part Number
AOD407
Description
MOSFET P-CH -60V -12A TO-252
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AOD407

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
115 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
1185pF @ 30V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1102-2

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
General Description
The AOD407 uses advanced trench technology to
provide excellent R
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
AOD407
P-Channel Enhancement Mode Field Effect Transistor
-RoHS Compliant
-Halogen Free*
G
D
B
A
C
Top View
DS(ON)
C
T
T
T
T
T
T
C
C
C
C
A
A
=25°C
=70°C
=25°C
=100°C
=25°C
=100°C
, low gate charge and low
B
A
A
G
A
TO252
DPAK
=25°C unless otherwise noted
S
D
C
Steady-State
Steady-State
Bottom View
t ≤ 10s
Symbol
V
V
I
I
I
E
P
P
T
D
DM
AR
J
DS
GS
AR
D
DSM
, T
STG
S
Symbol
G
Features
V
I
R
R
100% UIS tested
100% RG tested
R
R
D
DS
DS(ON)
DS(ON)
θJC
θJA
= -12A (V
(V) = -60V
< 115mΩ (V
< 150mΩ (V
Maximum
-55 to 175
16.7
GS
Typ
±20
-60
-12
-10
-30
-12
2.5
1.6
2.5
23
50
25
40
= -10V)
G
GS
GS
= -10V)
= -4.5V)
Max
25
50
3
D
S
Units
Units
°C/W
°C/W
°C/W
mJ
°C
W
W
V
V
A
A

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AOD407 Summary of contents

Page 1

... AOD407 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD407 uses advanced trench technology to provide excellent R , low gate charge and low DS(ON) gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. ...

Page 2

... AOD407 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AOD407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 - (Volts) DS Fig 1: On-Region Characteristics 220 200 180 V =-4.5V GS 160 140 120 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 250 200 150 25°C 100 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...

Page 4

... AOD407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-30V =-12A (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =175°C, T J(Max) R 10.0 DS(ON) limited 1.0 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJC J, =3°C/W θJC 1 0.1 Single Pulse 0.01 0.00001 ...

Page 5

... AOD407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =25° 0.00001 0.0001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability 100 T (°C) CASE Figure 14: Current De-rating (Note θJA J, =50°C/W 1 θJA 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & ...

Page 6

... AOD407 - Vgs Ig Vds Vgs Rg Vgs L Vds Id Vgs Vgs Vds + Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. G ate Charge Test Circuit & W aveform Vgs -10V - Vds DUT Resistive Switching Test Circuit & W aveform d(on) Vgs - DUT Vdd VDC + Vds Unclam ped Inductive Switching (U IS) Test Circuit & W aveform s ...

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