STD27N3LH5 STMicroelectronics, STD27N3LH5 Datasheet - Page 4

• Manufacturer Part Number: STD27N3LH5
• Description: MOSFET N-CH 30V 27A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD27N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 475pF @ 25V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10019-2

Electrical characteristics
2
4/21
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
I
Q
Q
I
C
DS(on)
GS(th)
C
C
Q
Q
GSS
DSS
R
Q
oss
gs1
gs2
rss
iss
gs
gd
G
g
= 25 °C unless otherwise specified)
Drain-source
breakdown Voltage
Zero gate voltage
drain current (V
Gate body leakage
current
(V
Gate threshold voltage V
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V
charge
Post V
source charge
Gate input resistance
Static
Dynamic
DS
= 0)
th
Parameter
Parameter
th
gate-to-source
gate-to-
GS
= 0)
Doc ID 15617 Rev 3
V
V
V
V
(Figure
V
V
(Figure
f = 1 MHz gate bias = 0 test
signal level = 20 mV
open drain
I
V
V
V
V
SMD version
V
SMD version
D
GS
GS
GS
GS
GS
GS
DS
DD
DD
DS
DS
DS
= 250 µA, V
= 25 V, f = 1 MHz,
= 0
= 15 V, I
= 5 V
= 15 V, I
= 5 V
= 30 V
= 30 V, Tc = 125 °C
= ± 22 V
= V
= 10 V, I
= 4.5 V, I
Test conditions
Test conditions
16)
21)
GS
, I
D
D
D
D
D
= 250 µA
= 13.5 A
GS
= 27 A
= 27 A
= 13.5 A
STD27N3LH5, STP27N3LH5, STU27N3LH5
= 0
Min.
Min
30
1
-
-
-
-
0.015
0.014
0.021
0.020
Typ.
0.67
0.84
Typ.
475
4.6
1.7
1.9
2.5
97
19
0.020
0.019
0.028
0.027
Max.
Max.
±
2.5
100
10
1
-
-
-
-
Unit
Unit
nC
nC
nC
nC
nC
µA
µA
nA
pF
pF
pF
Ω
V
V
Ω
Ω
Ω
Ω