STD27N3LH5 STMicroelectronics, STD27N3LH5 Datasheet - Page 6

• Manufacturer Part Number: STD27N3LH5
• Description: MOSFET N-CH 30V 27A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD27N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 475pF @ 25V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10019-2

Electrical characteristics
2.1
6/21
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
100
100
0.1
0.1
(A)
(A)
10
10
I
I
D
D
1
1
0.1
0.1
(A)
40
20
10
70
60
50
30
I
D
0
0
Electrical characteristics (curves)
Safe operating area for TO-220
Safe operating area for DPAK, IPAK Figure 5.
Output characteristics
V
GS
1
=10V
1
1
Tc=25°C
Tj=175°C
Sinlge
pulse
Tc=25°C
Tj=175°C
Sinlge
pulse
2
10
10
3
6V
4
V
V
3V
DS
DS
V
5V
4V
(V)
(V)
DS
Doc ID 15617 Rev 3
100µs
100µs
1ms
10ms
1ms
10ms
AM03897v1
AM03898v1
(V)
AM03900v1
Figure 3.
Figure 7.
STD27N3LH5, STP27N3LH5, STU27N3LH5
(A)
40
30
20
10
70
60
50
I
D
0
0
Thermal impedance for TO-220
Thermal impedance for DPAK, IPAK
Transfer characteristics
V
DS
2
=5V
4
6
8
V
GS
(V)
AM03901v1