ECH8402-TL-E SANYO, ECH8402-TL-E Datasheet

MOSFET N-CH 30V 10A ECH8

ECH8402-TL-E

Manufacturer Part Number
ECH8402-TL-E
Description
MOSFET N-CH 30V 10A ECH8
Manufacturer
SANYO
Datasheet

Specifications of ECH8402-TL-E

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 10V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-ECH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Other names
869-1154-2
Ordering number : ENN8148
ECH8402
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KB
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Low ON-resistance.
4V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Symbol
Symbol
V GSS
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
I D =1mA, V GS =0
V DS =30V, V GS =0
V GS = 16V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =5A
I D =5A, V GS =10V
I D =2.5A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
ECH8402
Conditions
Conditions
2
0.8mm)
min
11205PE TS IM TA-100740
1.0
5.6
30
Ratings
typ
1400
Ratings
270
190
9.4
23
17
82
96
53
11
Continued on next page.
--55 to +150
max
150
1.6
2.4
30
20
10
40
10
15
32
1
No.8148-1/4
Unit
Unit
m
m
pF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
V
V
S
C
C
A
A

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ECH8402-TL-E Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN ECH8402 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... Switching Time Test Circuit V DD =15V V IN 10V = PW= ECH8402 P 0.1 0.2 0.3 0.4 0.5 0.6 Drain-to-Source Voltage ECH8402 Symbol Conditions =10V =10V =5A Qgs V DS =10V =10V =5A Qgd V DS =10V =10V = =10A Electrical Connection 0.15 V OUT 0.7 0.8 0.9 1.0 0 IT08482 Ratings min ...

Page 3

... I D =2. Gate-to-Source Voltage 1 0.1 1.0 Drain Current Time -- 100 0.1 1.0 Drain Current =10V Total Gate Charge ECH8402 40 Ta= --50 --25 IT08484 =10V 0.001 0.2 0.3 10 IT08486 =15V V GS =10V 3 2 1000 100 IT08488 100 1 Operation in this 3 area is limited (on). 2 0.1 ...

Page 4

... Ambient Temperature Note on usage : Since the ECH8402 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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