ECH8411-TL-E SANYO, ECH8411-TL-E Datasheet

MOSFET N-CH 20V 9A ECH8

ECH8411-TL-E

Manufacturer Part Number
ECH8411-TL-E
Description
MOSFET N-CH 20V 9A ECH8
Manufacturer
SANYO
Datasheet

Specifications of ECH8411-TL-E

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 4A, 4V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9A
Gate Charge (qg) @ Vgs
21nC @ 4V
Input Capacitance (ciss) @ Vds
1740pF @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-ECH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Other names
869-1155-2
Ordering number : ENA0073
ECH8411
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KR
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Ultrahigh-speed switching.
1.8V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V GSS
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
I D =1mA, V GS =0V
V DS =20V, V GS =0V
V GS = 8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =4A
I D =4A, V GS =4V
I D =2A, V GS =2.5V
I D =2A, V GS =1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
ECH8411
Conditions
Conditions
2
0.8mm)
83005PE MS IM TB-00001772
min
0.5
20
7
Ratings
typ
1740
Ratings
310
290
170
240
210
12
12
16
25
30
Continued on next page.
--55 to +150
max
150
1.4
1.3
20
12
36
10
16
23
36
No. A0073-1/4
9
1
Unit
Unit
m
m
m
pF
pF
pF
ns
ns
ns
ns
V
V
S
W
V
V
A
A
A
A
C
C

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ECH8411-TL-E Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN ECH8411 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit V DD =10V = =2 PW= P.G 50 ECH8411 S ECH8411 Symbol Conditions =10V =4V =9A Qgs V DS =10V =4V =9A Qgd V DS =10V =4V = =9A =0V Electrical Connection 0.15 V OUT Ratings min typ max 21 3.5 6.2 0.84 1 ...

Page 3

... 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Drain-to-Source Voltage (on = Gate-to-Source Voltage =10V 1 0 0.01 0.1 1.0 Drain Current Time -- 100 (on 0.1 1.0 Drain Current ECH8411 0.8 0.9 1.0 0 IT10031 40 Ta= --60 --40 IT10033 = 0.001 IT10035 =10V = 1000 100 IT10037 =10V 0.5 1 ...

Page 4

... Ambient Temperature Note on usage : Since the ECH8411 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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