IRFH7923TRPBF International Rectifier, IRFH7923TRPBF Datasheet

MOSFET N-CH 30V 15A PQFN56

IRFH7923TRPBF

Manufacturer Part Number
IRFH7923TRPBF
Description
MOSFET N-CH 30V 15A PQFN56
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH7923TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1095pF @ 15V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-PQFN, 8-PowerQFN
Transistor Polarity
N Channel
Continuous Drain Current Id
15A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
6.8mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.8V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH7923TRPBFCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH7923TRPBF
Manufacturer:
TOS
Quantity:
3 192
l
l
l
l
l
l
l
l
l
l
www.irf.com
Applications
Benefits
Notes  through
V
V
I
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
J
STG
DS
GS
D
D
θJC
θJA
@ T
@ T
@ T
High Frequency Point-of-Load Synchronous Buck
Converter for Applications in Neworking &
Computing Systems
Optimized for Control FET Applications
Very low R
Low Gate Charge
Fully Characterized Avalanche Voltage and
100% Tested for R
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
@T
@T
Current
A
A
C
A
A
= 25°C
= 70°C
= 25°C
= 25°C
= 70°C
DS(ON)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Case
Junction-to-Ambient
at 4.5V V
are on page 9
G
GS
Parameter
Parameter
f
g
g
g
g
GS
GS
GS
@ 10V
@ 10V
@ 10V
V
30V
DSS
Typ.
–––
–––
8.7m @V
IRFH7923PbF
-55 to + 150
HEXFET
R
Max.
0.03
± 20
120
3.1
DS(on)
30
15
12
33
2
GS
Max.
max
®
D
8.3
D
40
D
Power MOSFET
D
= 10V 8.7nC
PQFN
Units
Units
W/°C
°C/W
°C
06/18/08
W
V
A
Qg
S
S
S
1
G

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IRFH7923TRPBF Summary of contents

Page 1

Applications High Frequency Point-of-Load Synchronous Buck l Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications l Benefits Very low DS(ON) GS Low Gate Charge l Fully Characterized Avalanche Voltage and ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

Page 5

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 SINGLE ...

Page 6

125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V D.U ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16. Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 17. Gate Charge ...

Page 8

PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER Note: For the most current drawing please refer to IR website at: http://www.irf.com/package XXXX PART NUMBER XYWWX MARKING ...

Page 9

PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.39mH ƒ ...

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