STD20NF06LT4 STMicroelectronics, STD20NF06LT4 Datasheet

MOSFET N-CH 60V 24A DPAK

STD20NF06LT4

Manufacturer Part Number
STD20NF06LT4
Description
MOSFET N-CH 60V 24A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD20NF06LT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 25V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
24A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
32mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.032 Ohms
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 18 V
Continuous Drain Current
24 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5888-2
STD20NF06LT4

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General features
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” stripbased process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
July 2006
Order codes
STD20NF06L-1
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Switching application
STD20NF06L
Type
STD20NF06L-1
STD20NF06L
Part number
V
60V
60V
DSS
<0.040Ω
<0.040Ω
R
DS(on)
N-channel 60V - 0.032Ω - 24A - DPAK - IPAK
D20NF06L-1
D20NF06L
Marking
24A
24A
I
D
Rev 4
Internal schematic diagram
STripFET™ II Power MOSFET
Package
DPAK
IPAK
DPAK
1
STD20NF06L-1
3
STD20NF06L
IPAK
Packaging
Tape & reel
Tube
1
2
3
www.st.com
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STD20NF06LT4 Summary of contents

Page 1

... Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD20NF06L - STD20NF06L-1 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) Drain current (pulsed) I ...

Page 4

Electrical characteristics 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 3. On /off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage I GSS current (V V Gate threshold voltage ...

Page 5

STD20NF06L - STD20NF06L-1 Table 5. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 6. Source drain diode Symbol I Source-drain current SD I Source-drain current (pulsed) ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Normalized B VDSS 6/14 Figure 2. Figure 4. vs temperature Figure 6. STD20NF06L - STD20NF06L-1 Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

STD20NF06L - STD20NF06L-1 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/14 ...

Page 8

Test circuits 3 Test circuits Figure 11. Switching times test circuit for resistive load Figure 13. Test circuit for inductive load switching and diode recovery times Figure 15. Unclamped inductive waveform 8/14 STD20NF06L - STD20NF06L-1 Figure 12. Gate charge test ...

Page 9

STD20NF06L - STD20NF06L-1 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package ...

Page 10

Package mechanical data DIM 10/14 TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 0.9 5.2 5.4 ...

Page 11

STD20NF06L - STD20NF06L-1 DIM (L1 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 5.2 ...

Page 12

Packing mechanical data 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX 10.4 10.6 B1 12.1 D 1.5 1.6 D1 1.5 E 1.65 1.85 F 7.4 7.6 ...

Page 13

STD20NF06L - STD20NF06L-1 6 Revision history Table 7. Revision history Date 19-Apr-2005 08-Jun-2006 03-Jul-2006 Revision 2 Added package IPAK 3 Graphical updates 4 New template, no content change Revision history Changes 13/14 ...

Page 14

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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